LSGG04R029 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LSGG04R029
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 62.6 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 VQgⓘ - Carga de la puerta: 42.5 nC
trⓘ - Tiempo de subida: 22.5 nS
Cossⓘ - Capacitancia de salida: 1130 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0029 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET LSGG04R029
LSGG04R029 Datasheet (PDF)
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