LSGG04R029 MOSFET. Datasheet pdf. Equivalent
Type Designator: LSGG04R029
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 62.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 42.5 nC
Rise Time (tr): 22.5 nS
Drain-Source Capacitance (Cd): 1130 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0029 Ohm
Package: TO-252
LSGG04R029 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LSGG04R029 Datasheet (PDF)
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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
