LSGG04R029
MOSFET. Datasheet pdf. Equivalent
Type Designator: LSGG04R029
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 62.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 120
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 42.5
nC
trⓘ - Rise Time: 22.5
nS
Cossⓘ -
Output Capacitance: 1130
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0029
Ohm
Package:
TO-252
LSGG04R029
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LSGG04R029
Datasheet (PDF)
..1. Size:1070K lonten
lsgc04r029 lsgg04r029 lsgh04r029 lsgn04r029.pdf 
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5.1. Size:771K lonten
lsgg04r028 lsgh04r028.pdf
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9.1. Size:749K lonten
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9.2. Size:911K lonten
lsgg06r098w3 lsgn06r098w3.pdf
LSGG06R098W3/LSGN06R098W3Lonten N-channel 60V, 80A, 9.8m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using split gate trench DMOS RDS(on).max@ V =10V 9.8mGStechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance,
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lsgc06r034w3 lsge06r034w3 lsgn06r034w3 lsgg06r034w3.pdf
LSGC06R034W3\LSGE06R034W3\LSGN06R034W3\LSGG06R034W3Lonten N-channel 60 V, 80 A, 3.4m Power MOSFETFeatures Product SummaryVDS 60V Extremely low on-resistance RDS(on)RDS(on)@10V typ 2.8m Excellent Q xR product(FOM)g DS(on)RDS(on)@4.5V typ 3.6m Qualified according to JEDEC criteriaID 80AApplications Synchronous Rectification for AC/DC QuickCharger1
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