LSGG06R098W3 Todos los transistores

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 lsgg06r098w3 lsgn06r098w3.pdf

LSGG06R098W3/LSGN06R098W3 Lonten N-channel 60V, 80A, 9.8m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using split gate trench DMOS R DS(on).max@ V =10V 9.8m GS technology. This advanced technology has been I 80A D especially tailored to minimize on-state resistance, provide superior switching performance,

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 lsgc06r034w3 lsge06r034w3 lsgn06r034w3 lsgg06r034w3.pdf

LSGC06R034W3 LSGE06R034W3 LSGN06R034W3 LSGG06R034W3 Lonten N-channel 60 V, 80 A, 3.4m Power MOSFET Features Product Summary VDS 60V Extremely low on-resistance R DS(on) RDS(on)@10V typ 2.8m Excellent Q xR product(FOM) g DS(on) RDS(on)@4.5V typ 3.6m Qualified according to JEDEC criteria I D 80A Applications Synchronous Rectification for AC/DC QuickCharger 1

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 lsgn03r020 lsgg03r020 lsgc03r020.pdf

LSGN03R020/LSGG03R020/LSGC03R020 Lonten N-channel 30V, 120A, 2.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 30V DSS effect transistors are using split gate trench DMOS R DS(on),max@ V =10V 2.0m GS technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior switching perf

 9.2. Size:771K  lonten
 lsgg04r028 lsgh04r028.pdf

LSGG04R028/LSGH04R028 Lonten N-channel 40V, 120A, 2.8m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using split gate trench DMOS R GS DS(on),max@ V =10V 2.8m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior switching performance, and

 9.3. Size:765K  lonten
 lsgh08r060w3 lsgg08r060w3.pdf

LSGH08R060W3/LSGG08R060W3 Lonten N-channel 85V, 80A, 6.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 85V DSS effect transistors are using split gate trench DMOS R GS DS(on).max@ V =10V 6.0m technology. This advanced technology has been I 80A D especially tailored to minimize on-state resistance, provide superior switching performance, a

 9.4. Size:933K  lonten
 lsgc04r035 lsgd04r035 lsge04r035 lsgg04r035 lsgh04r035 lsgn04r035.pdf

LSGC04R035/LSGD04R035/LSGE04R035/ LSGG04R035/LSGH04R035/LSGN04R035 Lonten N-channel 40V, 120A, 3.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using split gate trench DMOS R GS DS(on),max@ V =10V 3.5m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance

 9.5. Size:1070K  lonten
 lsgc04r029 lsgg04r029 lsgh04r029 lsgn04r029.pdf

LSGC04R029/LSGG04R029/LSGH04R029/LSGN04R029 Lonten N-channel 40V, 120A, 2.9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using split gate trench DMOS R GS DS(on),max@ V =10V 2.9m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior swit