LSGG06R098W3 - описание и поиск аналогов

LSGG06R098W3/LSGN06R098W3 Lonten N-channel 60V, 80A, 9.8m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using split gate trench DMOS R DS(on).max@ V =10V 9.8m GS technology. This advanced technology has been I 80A D especially tailored to minimize on-state resistance, provide superior switching performance,

LSGC06R034W3 LSGE06R034W3 LSGN06R034W3 LSGG06R034W3 Lonten N-channel 60 V, 80 A, 3.4m Power MOSFET Features Product Summary VDS 60V Extremely low on-resistance R DS(on) RDS(on)@10V typ 2.8m Excellent Q xR product(FOM) g DS(on) RDS(on)@4.5V typ 3.6m Qualified according to JEDEC criteria I D 80A Applications Synchronous Rectification for AC/DC QuickCharger 1

LSGN03R020/LSGG03R020/LSGC03R020 Lonten N-channel 30V, 120A, 2.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 30V DSS effect transistors are using split gate trench DMOS R DS(on),max@ V =10V 2.0m GS technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior switching perf

LSGG04R028/LSGH04R028 Lonten N-channel 40V, 120A, 2.8m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using split gate trench DMOS R GS DS(on),max@ V =10V 2.8m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior switching performance, and

LSGH08R060W3/LSGG08R060W3 Lonten N-channel 85V, 80A, 6.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 85V DSS effect transistors are using split gate trench DMOS R GS DS(on).max@ V =10V 6.0m technology. This advanced technology has been I 80A D especially tailored to minimize on-state resistance, provide superior switching performance, a

LSGC04R035/LSGD04R035/LSGE04R035/ LSGG04R035/LSGH04R035/LSGN04R035 Lonten N-channel 40V, 120A, 3.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using split gate trench DMOS R GS DS(on),max@ V =10V 3.5m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance

LSGC04R029/LSGG04R029/LSGH04R029/LSGN04R029 Lonten N-channel 40V, 120A, 2.9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using split gate trench DMOS R GS DS(on),max@ V =10V 2.9m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior swit