AO4882-MS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AO4882-MS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.9 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40.4 nS
Cossⓘ - Capacitancia de salida: 107 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de AO4882-MS MOSFET
AO4882-MS Datasheet (PDF)
ao4882-ms.pdf

www.msksemi.comAO4882-MSSemiconductor CompianceApplicationD1D1D2D2Battery protectionS1G1Load switchS2G2Uninterruptible power supplySOP-8General FeaturesD1 D1 D2 D2V = 40V I =DS D 6A8 7 6 5R
ao4882.pdf

AO4882 40V Dual N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AO4882 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This is an all ID (at VGS=10V) 8Apurpose device that is suitable for use in a wide range of RDS(ON) (at VGS=10V)
ao4882.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4882 (KO4882)SOP-8 Unit:mm Features VDS (V) = 40V1.50 0.15 ID = 8A (VGS = 10V) RDS(ON) 19m (VGS = 10V)1 S2 5 D1 RDS(ON) 27m (VGS = 4.5V)6 D12 G27 D23 S18 D24 G1D1 D2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 40V Gate-So
ao4884.pdf

AO4884 40V Dual N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AO4884 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This is an all ID (at VGS=10V) 10Apurpose device that is suitable for use in a wide range of RDS(ON) (at VGS=10V)
Otros transistores... LSNC65R380HT , LSS65R1K5HT , AO3400MI-MS , AO3401MI-MS , AO3415AI-MS , AO4803-MS , AO4812-MS , AO4842-MS , IRLB4132 , AO4884-MS , MMFTN3019E-MS , SI2301AI-MS , SI2302AI-MS , WPM2015-MS , WPM2341-MS , MEM2301X , MEM2301XG-N .



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