All MOSFET. AO4882-MS Datasheet

 

AO4882-MS MOSFET. Datasheet pdf. Equivalent


   Type Designator: AO4882-MS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.8 nC
   trⓘ - Rise Time: 40.4 nS
   Cossⓘ - Output Capacitance: 107 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOP8

 AO4882-MS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AO4882-MS Datasheet (PDF)

 ..1. Size:1355K  msksemi
 ao4882-ms.pdf

AO4882-MS AO4882-MS

www.msksemi.comAO4882-MSSemiconductor CompianceApplicationD1D1D2D2Battery protectionS1G1Load switchS2G2Uninterruptible power supplySOP-8General FeaturesD1 D1 D2 D2V = 40V I =DS D 6A8 7 6 5R

 8.1. Size:343K  aosemi
 ao4882.pdf

AO4882-MS AO4882-MS

AO4882 40V Dual N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AO4882 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This is an all ID (at VGS=10V) 8Apurpose device that is suitable for use in a wide range of RDS(ON) (at VGS=10V)

 8.2. Size:1390K  kexin
 ao4882.pdf

AO4882-MS AO4882-MS

SMD Type MOSFETDual N-Channel MOSFETAO4882 (KO4882)SOP-8 Unit:mm Features VDS (V) = 40V1.50 0.15 ID = 8A (VGS = 10V) RDS(ON) 19m (VGS = 10V)1 S2 5 D1 RDS(ON) 27m (VGS = 4.5V)6 D12 G27 D23 S18 D24 G1D1 D2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 40V Gate-So

 9.1. Size:197K  aosemi
 ao4884.pdf

AO4882-MS AO4882-MS

AO4884 40V Dual N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AO4884 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This is an all ID (at VGS=10V) 10Apurpose device that is suitable for use in a wide range of RDS(ON) (at VGS=10V)

 9.2. Size:550K  aosemi
 ao4886.pdf

AO4882-MS AO4882-MS

AO4886100V Dual N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AO4886 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 3.3Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

 9.3. Size:1076K  kexin
 ao4884.pdf

AO4882-MS AO4882-MS

SMD Type MOSFETDual N-Channel MOSFETAO4884 (KO4884)SOP-8 Unit:mm Features VDS (V) = 40V ID = 10A (VGS = 10V)1.50 0.15 RDS(ON) 13m (VGS = 10V) RDS(ON) 16m (VGS = 4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D1D2G1G2S1S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 40V Gat

 9.4. Size:2656K  kexin
 ao4886.pdf

AO4882-MS AO4882-MS

SMD Type MOSFETN-Channel Enhancement MOSFET AO4886 (KO4886) FeaturesSOP-8 VDS (V) = 100V ID = 3.3A (VGS = 10V) RDS(ON) 80m (VGS = 10V) RDS(ON) 91m (VGS = 4.5V)1.50 0.15D1 D2D1 D2Top ViewTop ViewS2 1 8 D2S2 1 8 D2G2 D2G2 D22277S1 3 6 D1S1 3 6 D1G1 4 5 D1 G1 G2G1 4 5 D1 G1 G2S1 S2S1 S2 Absolute Maximum Ratin

 9.5. Size:1630K  msksemi
 ao4884-ms.pdf

AO4882-MS AO4882-MS

www.msksemi.comAO4884-MSSemiconductorCompianceD1D1D2D2General FeaturesS1G1S2V = 40V I =10ADS DG2R

 9.6. Size:1699K  cn vbsemi
 ao4884.pdf

AO4882-MS AO4882-MS

AO4884www.VBsemi.twDual N-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.010 at VGS = 10 V 1240 5.9 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 10Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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