AO4882-MS
MOSFET. Datasheet pdf. Equivalent
Type Designator: AO4882-MS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.9
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9.8
nC
trⓘ - Rise Time: 40.4
nS
Cossⓘ -
Output Capacitance: 107
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03
Ohm
Package:
SOP8
AO4882-MS
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO4882-MS
Datasheet (PDF)
..1. Size:1355K msksemi
ao4882-ms.pdf 
www.msksemi.comAO4882-MSSemiconductor CompianceApplicationD1D1D2D2Battery protectionS1G1Load switchS2G2Uninterruptible power supplySOP-8General FeaturesD1 D1 D2 D2V = 40V I =DS D 6A8 7 6 5R
8.1. Size:343K aosemi
ao4882.pdf
AO4882 40V Dual N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AO4882 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This is an all ID (at VGS=10V) 8Apurpose device that is suitable for use in a wide range of RDS(ON) (at VGS=10V)
8.2. Size:1390K kexin
ao4882.pdf
SMD Type MOSFETDual N-Channel MOSFETAO4882 (KO4882)SOP-8 Unit:mm Features VDS (V) = 40V1.50 0.15 ID = 8A (VGS = 10V) RDS(ON) 19m (VGS = 10V)1 S2 5 D1 RDS(ON) 27m (VGS = 4.5V)6 D12 G27 D23 S18 D24 G1D1 D2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 40V Gate-So
9.1. Size:197K aosemi
ao4884.pdf
AO4884 40V Dual N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AO4884 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This is an all ID (at VGS=10V) 10Apurpose device that is suitable for use in a wide range of RDS(ON) (at VGS=10V)
9.2. Size:550K aosemi
ao4886.pdf
AO4886100V Dual N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AO4886 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 3.3Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)
9.3. Size:1076K kexin
ao4884.pdf
SMD Type MOSFETDual N-Channel MOSFETAO4884 (KO4884)SOP-8 Unit:mm Features VDS (V) = 40V ID = 10A (VGS = 10V)1.50 0.15 RDS(ON) 13m (VGS = 10V) RDS(ON) 16m (VGS = 4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D1D2G1G2S1S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 40V Gat
9.4. Size:2656K kexin
ao4886.pdf
SMD Type MOSFETN-Channel Enhancement MOSFET AO4886 (KO4886) FeaturesSOP-8 VDS (V) = 100V ID = 3.3A (VGS = 10V) RDS(ON) 80m (VGS = 10V) RDS(ON) 91m (VGS = 4.5V)1.50 0.15D1 D2D1 D2Top ViewTop ViewS2 1 8 D2S2 1 8 D2G2 D2G2 D22277S1 3 6 D1S1 3 6 D1G1 4 5 D1 G1 G2G1 4 5 D1 G1 G2S1 S2S1 S2 Absolute Maximum Ratin
9.5. Size:1630K msksemi
ao4884-ms.pdf
www.msksemi.comAO4884-MSSemiconductorCompianceD1D1D2D2General FeaturesS1G1S2V = 40V I =10ADS DG2R
9.6. Size:1699K cn vbsemi
ao4884.pdf
AO4884www.VBsemi.twDual N-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.010 at VGS = 10 V 1240 5.9 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 10Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
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