2SK3019A Todos los transistores

2SK3019A Features Low ON-Resistance Fast Switching Speed Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-Channel Halogen Free. Green Device (Note 1) MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range -55 C to +150 C

2SK3019 Transistor 2.5V Drive Nch MOS FET 2SK3019 Dimensions (Unit mm) Structure Silicon N-channel EMT3 MOSFET 1.6 0.7 0.55 0.3 ( ) 3 Applications ( ) ( ) 2 1 Interfacing, switching (30V, 100mA) 0.2 0.2 0.15 0.5 0.5 1.0 (1)Source Features (2)Gate 1) Low on-resistance. (3)Drain Abbreviated symbol KN 2) Fast switching speed. 3) Low voltage drive (2.5

Data Sheet 2.5V Drive Nch MOSFET 2SK3019EB Structure Dimensions (Unit mm) Silicon N-channel MOSFET EMT3F (3) Features 1) High-speed switching. (1) (2) 2) Low voltage drive(2.5V drive). 3) Drive circuits can be simple. 4) Parallel use is easy. Abbreviated symbol KN Application Switching Packaging specifications Inner circuit (3) Package Taping Type

2SK3019 Features Low ON-Resistance Fast Switching Speed Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-Channel Halogen Free Available Upon Request By Adding Suffix "-HF" MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range -55

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2SK3019 N-channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-523 8 @4V 30V 100mA 13 @2.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION Low on-resistance Interfacing , Switching Fast switching speed Low voltage drive makes this device ideal for Portable equipment Easily des

2SK3019T N-Channel MOSFET 3 P b Lead(Pb)-Free 1 2 1. GATE FEATURES 2. SOURCE * Low on-resistance 3. DRAIN * Fast switching speed * Low voltage drive makes this device ideal for portable equipment SOT-523(SC-75) * Easily designed drive circuits * Easy to parallel Maximum Ratings (TA=25 Cunless otherwise specified) Characteristic Symbol Values Unit Drain-Source Voltage VDSS 3

FM120-M WILLAS THRU 2SK3019TT1 SOT-523 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline N-channel MOSFET Features FEATURES Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low on-resistance Low

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2SK3019 Transistor 2.5V Drive Nch MOS FET 2SK3019 External dimensions (Unit mm) Structure Silicon N-channel EMT3 MOSFET 1.6 0.7 0.55 0.3 ( ) 3 Applications ( ) ( ) 2 1 Interfacing, switching (30V, 100mA) 0.2 0.2 0.15 0.5 0.5 1.0 (1)Source Features (2)Gate 1) Low on-resistance. (3)Drain Abbreviated sym

Spec. No. C800C3 Issued Date 2011.01.19 CYStech Electronics Corp. Revised Date Page No. 1/8 ESD protected N-Channel Enhancement Mode MOSFET BVDSS 30V 2SK3019C3 ID 100mA 8 RDSON(MAX) Description Low voltage drive(2.5V drive) makes this device ideal for portable equipment. High speed switching ESD protected device Pb-free lead plating & ha

LESHAN RADIO COMPANY, LTD. Silicon N-Channel MOSFET L2SK3019LT1G Applications 3 Interfacing,switching(30V,100mA) 1 Features 2 Low on-resistance SOT 23 Fast switching speed Low voltage drive(2.5V) makes this ideal for portable equipment Equivalent circuit Drive circuits can be simple Drain Parallel use is easy we declare that the material of product compliance with RoHS

SMD Type MOSFET N-Channel MOSFET 2SK3019 Features Low on-resistance. Fast switching speed. Low voltage drive (2.5V) makes this Drain device ideal for portable equipment. Easily designed drive circuits. 1 Gate Easy to parallel. Gate 2 Source 3 Drain Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Uni

2SK3019 N-channel MOSFET SOT-523 FEATURES 3 Low on-resistance 1 Fast switching speed 1. GATE Low voltage drive makes this device ideal for portable equipment 2 2. SOURCE Easily designed drive circuits 3. DRAIN Easy to parallel Marking KN Equivalent circuit MOSFET MAXIMUM RATINGS (Ta = 25 C unless otherwise noted) Units Symbol Parameter Value VDS D

TAK CHEONG SEMICONDUCTOR 150mW SOT-523 SURFACE MOUNT Plastic Package Green Product N-Channel MOSFET 3 Absolute Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Value Units 2 VDS Drain-Source Voltage 30 V 1. Gate VGS Continuous Gate-Source Voltage 20V V 2. Source 1 3. Drain ID Continuous Drain Current 100 mA SOT-523 PD Power Dissipation 1