BSS84A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSS84A
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.225 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 0.17 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 1 nS
Cossⓘ - Capacitancia de salida: 10 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm
Encapsulados: SOT23
Búsqueda de reemplazo de BSS84A MOSFET
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BSS84A datasheet
bss84a.pdf
BSS84A Features High Density Cell Design for Ultra Low RDS(on) Rugged and Reliable Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 P-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF" MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junct
bss84akmb.pdf
BSS84AKMB 50 V, single P-channel Trench MOSFET Rev. 1 6 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ElectroStatic Di
bss84akv.pdf
BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 19 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to
bss84ak.pdf
BSS84AK 50 V, 180 mA P-channel Trench MOSFET Rev. 1 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switc
Otros transistores... TN2524 , TP2104K1 , TP2104N3 , TP2435 , 2N7002KWA , 2SK3019A , BSS138A , BSS138AKDW , MMIS60R580P , BSS84KW , MCAC10H03 , MCAC16N03 , MCAC20N15 , MCAC30N06Y , MCAC40N10YA , MCAC50N06Y , MCAC50N10Y .
History: IRF7379I | STD13N50DM2AG | 2SK3355 | BRCS3401MC | SIR422DP-T1-GE3 | SI4947ADY
History: IRF7379I | STD13N50DM2AG | 2SK3355 | BRCS3401MC | SIR422DP-T1-GE3 | SI4947ADY
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