BSS84A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BSS84AFeatures High Density Cell Design for Ultra Low RDS(on) Rugged and Reliable Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 P-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings Operating Junct

BSS84AKMB50 V, single P-channel Trench MOSFETRev. 1 6 June 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ElectroStatic Di

BSS84AKV50 V, 170 mA dual P-channel Trench MOSFETRev. 1 19 May 2011 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to

BSS84AK50 V, 180 mA P-channel Trench MOSFETRev. 1 23 May 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switc

BSS84AKS50 V, 160 mA dual P-channel Trench MOSFETRev. 1 23 May 2011 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switching AEC-Q101 qualified

BSS84AKW50 V, 150 mA P-channel Trench MOSFETRev. 1 23 May 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switchin

BSS84AKM50 V, 230 mA P-channel Trench MOSFETRev. 1 23 May 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV