MCAC16N03 Todos los transistores

 

MCAC16N03 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MCAC16N03

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 20 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: DFN5060

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MCAC16N03 datasheet

 ..1. Size:578K  mcc
 mcac16n03.pdf pdf_icon

MCAC16N03

MCAC16N03 Features Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" N-CHANNEL Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) MOSFET Maximum Ratings Operating Junction Temperature Range -55 C to +150 C Storage Temperature Range

 0.1. Size:578K  1
 mcac16n03-tp.pdf pdf_icon

MCAC16N03

MCAC16N03 Features Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" N-CHANNEL Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) MOSFET Maximum Ratings Operating Junction Temperature Range -55 C to +150 C Storage Temperature Range

 9.1. Size:1028K  1
 mcac10h03-tp.pdf pdf_icon

MCAC16N03

MCAC10H03 Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 30 V IGSS VDS=0V, VGS = 20V Gate-Source Leakage Current 100 nA IDSS VDS=30V, VGS=0V Zero Gate Voltage Drain Current 1 A VGS(th) VDS=VGS, ID=250 A 1.2 1.7 2.5 V Gate-Thresh

 9.2. Size:1028K  mcc
 mcac10h03.pdf pdf_icon

MCAC16N03

MCAC10H03 Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 30 V IGSS VDS=0V, VGS = 20V Gate-Source Leakage Current 100 nA IDSS VDS=30V, VGS=0V Zero Gate Voltage Drain Current 1 A VGS(th) VDS=VGS, ID=250 A 1.2 1.7 2.5 V Gate-Thresh

MOSTRAR MÁS

Otros transistores... TP2435 , 2N7002KWA , 2SK3019A , BSS138A , BSS138AKDW , BSS84A , BSS84KW , MCAC10H03 , 60N06 , MCAC20N15 , MCAC30N06Y , MCAC40N10YA , MCAC50N06Y , MCAC50N10Y , MCAC60N08Y , MCAC75N02 , MCAC80N045Y .

History: 2SK3496-01MR | LPM2301B3F | SM4804DSK | JCS4N60CB | SM7340EHKP | AP4511GED-HF

 

 

 

 

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