SI2310B Todos los transistores

 ..1. Size:462K  mcc
 si2310b.pdf

SI2310B Features Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Enhancement Mode Halogen Free Available Upon Request By Adding Suffix "-HF" Field Effect Transistor Maximum Ratings Operating Junction Temperature Range -55 C to +150

 8.1. Size:601K  mcc
 si2310a.pdf

SI2310A Features Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Enhancement Mode Halogen Free. Green Device (Note 1) Field Effect Transistor Maximum Ratings Operating Junction Temperature Range -55 C to +150 C Storage

 8.2. Size:475K  mcc
 si2310.pdf

SI2310 Features Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Enhancement Mode Halogen Free Available Upon Request By Adding Suffix "-HF" Field Effect Transistor Maximum Ratings Operating Junction Temperature Range -55 C to +150

 8.3. Size:631K  shenzhen
 si2310.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2310 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS 60V Small Package Outline RDS(ON) 90m D Surface Mount Device ID 3A S SOT-23 G Description The MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance,

 8.4. Size:600K  umw-ic
 si2310a.pdf

R UMW UMW SI2310A UMW SI2310A UMW SI2310A N-ChanneI Power MOSFET Features SOT 23 Simple Drive Requirement Small Package Outline Surface Mount Device 1. GATE 2. SOURCE 3. DRAIN MARKING D G MS10 S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VD S 60 V GS Gate-Source Voltage V 20 V A Continuous Drain Current

 8.5. Size:3066K  born
 si2310.pdf

SI2310 MOSFET ROHS N-Channel Enhancement-Mode MOSFET SOT-23 - Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability MAXIMUM RANTINGS Parameter Symbol Ratings Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS 16 Drain Current (Note 1) ID 3.8 A Power Dissipation (N

 8.6. Size:752K  mdd
 si2310.pdf

SI2310 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 30V N-Channel MOSFET 3 ID Max V(BR)DSS RDS(on)Typ 105m @10V 1. GATE 3A 60V 2. SOURCE 125m @4.5V 1 3. DRAIN 2 DESCRIPTION The SI2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery prote

 8.7. Size:615K  cn puolop
 si2310.pdf

SI2310 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A

 8.8. Size:905K  cn vbsemi
 si2310.pdf

SI2310 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available TrenchFET Power MOSFET 0.085 at VGS = 10 V 4.0 60 2.1 nC 100 % Rg Tested 0.096 at VGS = 4.5 V 3.8 100 % UIS Tested APPLICATIONS Battery Switch DC/DC Converter D TO-236 (SOT23) G 1