SI2310B Datasheet and Replacement

SI2310BFeatures Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Enhancement Mode Halogen Free Available Upon Request By Adding Suffix "-HF"Field Effect TransistorMaximum RatingsOperating Junction Temperature Range : -55C to +150

SI2310AFeatures Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Enhancement Mode Halogen Free. Green Device (Note 1)Field Effect TransistorMaximum Ratings Operating Junction Temperature Range : -55C to +150C Storage

SI2310Features Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Enhancement Mode Halogen Free Available Upon Request By Adding Suffix "-HF"Field Effect TransistorMaximum Ratings Operating Junction Temperature Range : -55C to +150

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2310N-CHANNEL ENHANCEMENT MODEPOWER MOSFETSimple Drive Requirement BVDSS 60V Small Package Outline RDS(ON) 90m DSurface Mount Device ID 3A SSOT-23GDescription The MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance,

RUMWUMW SI2310AUMW SI2310AUMW SI2310AN-ChanneI Power MOSFET FeaturesSOT23 Simple Drive Requirement Small Package Outline Surface Mount Device1. GATE 2. SOURCE 3. DRAIN MARKING DGMS10S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating UnitDrain-Source Voltage VD S 60 VGSGate-Source Voltage V 20 VAContinuous Drain Current

SI2310MOSFET ROHSN-Channel Enhancement-Mode MOSFET SOT-23-FeaturesAdvanced trench process technology High Density Cell Design For Ultra Low On-ResistanceHigh Power and Current handing capability MAXIMUM RANTINGSParameter Symbol Ratings UnitDrain-Source Voltage VDSS 60VGate-Source Voltage VGSS 16Drain Current (Note 1) ID 3.8 APower Dissipation (N

SI2310 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 30V N-Channel MOSFET 3 ID MaxV(BR)DSS RDS(on)Typ 105m@10V 1. GATE 3A 60V 2. SOURCE 125m@4.5V 1 3. DRAIN 2 DESCRIPTION The SI2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery prote

SI2310 20V N-Channel Enhancement Mode MOSFETVDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A

SI2310www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G 1