SI2310B
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI2310B
Marking Code: S10B
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3
V
|Id|ⓘ - Maximum Drain Current: 3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6
nC
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 34
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105
Ohm
Package:
SOT23
SI2310B
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI2310B
Datasheet (PDF)
..1. Size:462K mcc
si2310b.pdf
SI2310BFeatures Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Enhancement Mode Halogen Free Available Upon Request By Adding Suffix "-HF"Field Effect TransistorMaximum RatingsOperating Junction Temperature Range : -55C to +150
8.1. Size:601K mcc
si2310a.pdf
SI2310AFeatures Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Enhancement Mode Halogen Free. Green Device (Note 1)Field Effect TransistorMaximum Ratings Operating Junction Temperature Range : -55C to +150C Storage
8.2. Size:475K mcc
si2310.pdf
SI2310Features Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Enhancement Mode Halogen Free Available Upon Request By Adding Suffix "-HF"Field Effect TransistorMaximum Ratings Operating Junction Temperature Range : -55C to +150
8.3. Size:631K shenzhen
si2310.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2310N-CHANNEL ENHANCEMENT MODEPOWER MOSFETSimple Drive Requirement BVDSS 60V Small Package Outline RDS(ON) 90m DSurface Mount Device ID 3A SSOT-23GDescription The MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance,
8.4. Size:600K umw-ic
si2310a.pdf
RUMWUMW SI2310AUMW SI2310AUMW SI2310AN-ChanneI Power MOSFET FeaturesSOT23 Simple Drive Requirement Small Package Outline Surface Mount Device1. GATE 2. SOURCE 3. DRAIN MARKING DGMS10S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating UnitDrain-Source Voltage VD S 60 VGSGate-Source Voltage V 20 VAContinuous Drain Current
8.5. Size:3066K born
si2310.pdf
SI2310MOSFET ROHSN-Channel Enhancement-Mode MOSFET SOT-23-FeaturesAdvanced trench process technology High Density Cell Design For Ultra Low On-ResistanceHigh Power and Current handing capability MAXIMUM RANTINGSParameter Symbol Ratings UnitDrain-Source Voltage VDSS 60VGate-Source Voltage VGSS 16Drain Current (Note 1) ID 3.8 APower Dissipation (N
8.6. Size:752K mdd
si2310.pdf
SI2310 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 30V N-Channel MOSFET 3 ID MaxV(BR)DSS RDS(on)Typ 105m@10V 1. GATE 3A 60V 2. SOURCE 125m@4.5V 1 3. DRAIN 2 DESCRIPTION The SI2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery prote
8.7. Size:615K cn puolop
si2310.pdf
SI2310 20V N-Channel Enhancement Mode MOSFETVDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A
8.8. Size:905K cn vbsemi
si2310.pdf
SI2310www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G 1
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