BVSS123LT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BVSS123LT1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.225 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.17 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 9 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de BVSS123LT1G MOSFET
BVSS123LT1G Datasheet (PDF)
bss123lt1g bvss123lt1g.pdf

BSS123LT1G,BVSS123LT1GPower MOSFET170 mAmps, 100 VoltsN-Channel SOT-23http://onsemi.comFeatures 170 mAMPS BVSS Prefix for Automotive and Other Applications Requiring100 VOLTSUnique Site and Control Change Requirements; AEC-Q101RDS(on) = 6 WQualified and PPAP CapableN-Channel These Devices are Pb-Free and are RoHS Compliant3MAXIMUM RATINGSRating Symbol Value
bvss123l.pdf

BSS123LT1G,BVSS123LT1GPower MOSFET170 mAmps, 100 VoltsN-Channel SOT-23http://onsemi.comFeatures 170 mAMPS BVSS Prefix for Automotive and Other Applications Requiring100 VOLTSUnique Site and Control Change Requirements; AEC-Q101RDS(on) = 6 WQualified and PPAP CapableN-Channel These Devices are Pb-Free and are RoHS Compliant3MAXIMUM RATINGSRating Symbol Value
bvss138l.pdf

BSS138L, BVSS138LPower MOSFET200 mA, 50 VN-Channel SOT-23Typical applications are DC-DC converters, power management inhttp://onsemi.comportable and battery-powered products such as computers, printers,PCMCIA cards, cellular and cordless telephones.200 mA, 50 VFeaturesRDS(on) = 3.5 W Low Threshold Voltage (VGS(th): 0.5 V-1.5 V) Makes it Ideal forN-ChannelLow Voltage
bss138l bvss138l.pdf

BSS138L, BVSS138LPower MOSFET200 mA, 50 VN-Channel SOT-23Typical applications are DC-DC converters, power management inwww.onsemi.comportable and battery-powered products such as computers, printers,PCMCIA cards, cellular and cordless telephones.200 mA, 50 VFeaturesRDS(on) = 3.5 W Low Threshold Voltage (VGS(th): 0.5 V-1.5 V) Makes it Ideal forN-ChannelLow Voltage Ap
Otros transistores... P1025HDB , P1825HDB , PA910BD , PK501BA , PK537BA , PK650DY , PKCH2BB , BSS123LT1G , 60N06 , EFC2J004NUZ , EFC2J013NUZ , EFC2K101NUZ , EFC2K103NUZ , EFC2K107NUZ , EFC3C001NUZ , EFC4C002NL , EFC4K105NUZ .
History: CS10N80P | SK840319 | AP9926GM | DG2N65-252 | FTS2057 | 2SK2637
History: CS10N80P | SK840319 | AP9926GM | DG2N65-252 | FTS2057 | 2SK2637



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