All MOSFET. BVSS123LT1G Datasheet

 

BVSS123LT1G Datasheet and Replacement


   Type Designator: BVSS123LT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 9 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: SOT23
 

 BVSS123LT1G substitution

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BVSS123LT1G Datasheet (PDF)

 ..1. Size:109K  onsemi
bss123lt1g bvss123lt1g.pdf pdf_icon

BVSS123LT1G

BSS123LT1G,BVSS123LT1GPower MOSFET170 mAmps, 100 VoltsN-Channel SOT-23http://onsemi.comFeatures 170 mAMPS BVSS Prefix for Automotive and Other Applications Requiring100 VOLTSUnique Site and Control Change Requirements; AEC-Q101RDS(on) = 6 WQualified and PPAP CapableN-Channel These Devices are Pb-Free and are RoHS Compliant3MAXIMUM RATINGSRating Symbol Value

 6.1. Size:105K  onsemi
bvss123l.pdf pdf_icon

BVSS123LT1G

BSS123LT1G,BVSS123LT1GPower MOSFET170 mAmps, 100 VoltsN-Channel SOT-23http://onsemi.comFeatures 170 mAMPS BVSS Prefix for Automotive and Other Applications Requiring100 VOLTSUnique Site and Control Change Requirements; AEC-Q101RDS(on) = 6 WQualified and PPAP CapableN-Channel These Devices are Pb-Free and are RoHS Compliant3MAXIMUM RATINGSRating Symbol Value

 9.1. Size:101K  onsemi
bvss138l.pdf pdf_icon

BVSS123LT1G

BSS138L, BVSS138LPower MOSFET200 mA, 50 VN-Channel SOT-23Typical applications are DC-DC converters, power management inhttp://onsemi.comportable and battery-powered products such as computers, printers,PCMCIA cards, cellular and cordless telephones.200 mA, 50 VFeaturesRDS(on) = 3.5 W Low Threshold Voltage (VGS(th): 0.5 V-1.5 V) Makes it Ideal forN-ChannelLow Voltage

 9.2. Size:70K  onsemi
bss138l bvss138l.pdf pdf_icon

BVSS123LT1G

BSS138L, BVSS138LPower MOSFET200 mA, 50 VN-Channel SOT-23Typical applications are DC-DC converters, power management inwww.onsemi.comportable and battery-powered products such as computers, printers,PCMCIA cards, cellular and cordless telephones.200 mA, 50 VFeaturesRDS(on) = 3.5 W Low Threshold Voltage (VGS(th): 0.5 V-1.5 V) Makes it Ideal forN-ChannelLow Voltage Ap

Datasheet: P1025HDB , P1825HDB , PA910BD , PK501BA , PK537BA , PK650DY , PKCH2BB , BSS123LT1G , RU7088R , EFC2J004NUZ , EFC2J013NUZ , EFC2K101NUZ , EFC2K103NUZ , EFC2K107NUZ , EFC3C001NUZ , EFC4C002NL , EFC4K105NUZ .

History: APT4080BN | 25N10G-TM3-T

Keywords - BVSS123LT1G MOSFET datasheet

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