BVSS123LT1G Specs and Replacement
Type Designator: BVSS123LT1G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 9 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
Package: SOT23
BVSS123LT1G substitution
- MOSFET ⓘ Cross-Reference Search
BVSS123LT1G datasheet
bss123lt1g bvss123lt1g.pdf
BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 http //onsemi.com Features 170 mAMPS BVSS Prefix for Automotive and Other Applications Requiring 100 VOLTS Unique Site and Control Change Requirements; AEC-Q101 RDS(on) = 6 W Qualified and PPAP Capable N-Channel These Devices are Pb-Free and are RoHS Compliant 3 MAXIMUM RATINGS Rating Symbol Value... See More ⇒
bvss123l.pdf
BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 http //onsemi.com Features 170 mAMPS BVSS Prefix for Automotive and Other Applications Requiring 100 VOLTS Unique Site and Control Change Requirements; AEC-Q101 RDS(on) = 6 W Qualified and PPAP Capable N-Channel These Devices are Pb-Free and are RoHS Compliant 3 MAXIMUM RATINGS Rating Symbol Value... See More ⇒
bvss138l.pdf
BSS138L, BVSS138L Power MOSFET 200 mA, 50 V N-Channel SOT-23 Typical applications are DC-DC converters, power management in http //onsemi.com portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 200 mA, 50 V Features RDS(on) = 3.5 W Low Threshold Voltage (VGS(th) 0.5 V-1.5 V) Makes it Ideal for N-Channel Low Voltage... See More ⇒
bss138l bvss138l.pdf
BSS138L, BVSS138L Power MOSFET 200 mA, 50 V N-Channel SOT-23 Typical applications are DC-DC converters, power management in www.onsemi.com portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 200 mA, 50 V Features RDS(on) = 3.5 W Low Threshold Voltage (VGS(th) 0.5 V-1.5 V) Makes it Ideal for N-Channel Low Voltage Ap... See More ⇒
Detailed specifications: P1025HDB, P1825HDB, PA910BD, PK501BA, PK537BA, PK650DY, PKCH2BB, BSS123LT1G, IRFZ48N, EFC2J004NUZ, EFC2J013NUZ, EFC2K101NUZ, EFC2K103NUZ, EFC2K107NUZ, EFC3C001NUZ, EFC4C002NL, EFC4K105NUZ
Keywords - BVSS123LT1G MOSFET specs
BVSS123LT1G cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: 2SK2162 | IXFH12N100Q | IRFB16N50K
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