FCP125N65S3R0 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCP125N65S3R0
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 181 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 24 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 40 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
Encapsulados: TO220
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FCP125N65S3R0 datasheet
fcp125n65s3r0.pdf
FCP125N65S3R0 MOSFET Power, N-Channel, SUPERFET) III, Easy Drive 650 V, 24 A, 125 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailo
fcp125n65s3.pdf
FCP125N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 24 A, 125 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 125 mW @ 10 V 24 A charge performance. This advanc
fcp125n65s3.pdf
isc N-Channel MOSFET Transistor FCP125N65S3 FEATURES Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 125m (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters AC and DC Mot
fcp125n65s.pdf
isc N-Channel MOSFET Transistor FCP125N65S FEATURES Static drain-source on-resistance RDS(on) 2.3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general purpose applications ABSOLUTE MAXIMUM RATI
Otros transistores... FCH125N65S3R0 , FCHD040N65S3 , FCHD125N65S3R0 , FCHD190N65S3R0 , FCMT099N65S3 , FCMT125N65S3 , FCMT180N65S3 , FCMT250N65S3 , IRFB4110 , FCP165N65S3 , FCP165N65S3R0 , FCP190N60_GF102 , FCP190N65S3R0 , FCP220N80 , FCP360N65S3R0 , FCP400N80Z , FCP600N65S3R0 .
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