FCP125N65S3R0 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCP125N65S3R0
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 181 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 24 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 40 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
Paquete / Cubierta: TO220
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FCP125N65S3R0 Datasheet (PDF)
fcp125n65s3r0.pdf

FCP125N65S3R0MOSFET Power, N-Channel,SUPERFET) III, Easy Drive650 V, 24 A, 125 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailo
fcp125n65s3.pdf

FCP125N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 24 A, 125 mWDescription www.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 125 mW @ 10 V 24 Acharge performance. This advanc
fcp125n65s3.pdf

isc N-Channel MOSFET Transistor FCP125N65S3FEATURESDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 125m(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch-Mode and Resonant-Mode Power SuppliesDC-DC ConvertersAC and DC Mot
fcp125n65s.pdf

isc N-Channel MOSFET Transistor FCP125N65SFEATURESStatic drain-source on-resistance:RDS(on) 2.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral purpose applicationsABSOLUTE MAXIMUM RATI
Otros transistores... FCH125N65S3R0 , FCHD040N65S3 , FCHD125N65S3R0 , FCHD190N65S3R0 , FCMT099N65S3 , FCMT125N65S3 , FCMT180N65S3 , FCMT250N65S3 , IRF640N , FCP165N65S3 , FCP165N65S3R0 , FCP190N60_GF102 , FCP190N65S3R0 , FCP220N80 , FCP360N65S3R0 , FCP400N80Z , FCP600N65S3R0 .
History: SE10080A | STF5N80K5



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