FCP165N65S3 Todos los transistores

 

FCP165N65S3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FCP165N65S3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 154 W
   Voltaje máximo drenador - fuente |Vds|: 650 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 19 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
   Carga de la puerta (Qg): 39 nC
   Tiempo de subida (tr): 22 nS
   Conductancia de drenaje-sustrato (Cd): 35 pF
   Resistencia entre drenaje y fuente RDS(on): 0.165 Ohm
   Paquete / Cubierta: TO220

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FCP165N65S3 Datasheet (PDF)

 ..1. Size:379K  onsemi
fcp165n65s3.pdf

FCP165N65S3
FCP165N65S3

FCP165N65S3MOSFET Power, N-Channel,SUPERFET III, Easy-Drive650 V, 19 A, 165 mWDescription www.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 165 mW @ 10 V 19 Acharge performance. This advanc

 0.1. Size:385K  onsemi
fcp165n65s3r0.pdf

FCP165N65S3
FCP165N65S3

FCP165N65S3R0MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 19 A, 165 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailor

 6.1. Size:757K  1
fcp165n60e.pdf

FCP165N65S3
FCP165N65S3

December 2015FCP165N60EN-Channel SuperFET II Easy-Drive MOSFET600 V, 23 A, 165 mFeatures Description 650 V @TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 132 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 5

 6.2. Size:800K  onsemi
fcp165n60e.pdf

FCP165N65S3
FCP165N65S3

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.3. Size:257K  inchange semiconductor
fcp165n60e.pdf

FCP165N65S3
FCP165N65S3

isc N-Channel MOSFET Transistor FCP165N60EFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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