Справочник MOSFET. FCP165N65S3

 

FCP165N65S3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FCP165N65S3
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 154 W
   Предельно допустимое напряжение сток-исток |Uds|: 650 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 4.5 V
   Максимально допустимый постоянный ток стока |Id|: 19 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 39 nC
   Время нарастания (tr): 22 ns
   Выходная емкость (Cd): 35 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.165 Ohm
   Тип корпуса: TO220

 Аналог (замена) для FCP165N65S3

 

 

FCP165N65S3 Datasheet (PDF)

 ..1. Size:379K  onsemi
fcp165n65s3.pdf

FCP165N65S3
FCP165N65S3

FCP165N65S3MOSFET Power, N-Channel,SUPERFET III, Easy-Drive650 V, 19 A, 165 mWDescription www.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 165 mW @ 10 V 19 Acharge performance. This advanc

 0.1. Size:385K  onsemi
fcp165n65s3r0.pdf

FCP165N65S3
FCP165N65S3

FCP165N65S3R0MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 19 A, 165 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailor

 6.1. Size:757K  1
fcp165n60e.pdf

FCP165N65S3
FCP165N65S3

December 2015FCP165N60EN-Channel SuperFET II Easy-Drive MOSFET600 V, 23 A, 165 mFeatures Description 650 V @TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 132 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 5

 6.2. Size:800K  onsemi
fcp165n60e.pdf

FCP165N65S3
FCP165N65S3

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.3. Size:257K  inchange semiconductor
fcp165n60e.pdf

FCP165N65S3
FCP165N65S3

isc N-Channel MOSFET Transistor FCP165N60EFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

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