FCP190N60_GF102 Todos los transistores

 

FCP190N60_GF102 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FCP190N60_GF102
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 208 W
   Voltaje máximo drenador - fuente |Vds|: 600 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 20.2 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
   Carga de la puerta (Qg): 57 nC
   Tiempo de subida (tr): 10 nS
   Conductancia de drenaje-sustrato (Cd): 1630 pF
   Resistencia entre drenaje y fuente RDS(on): 0.199 Ohm
   Paquete / Cubierta: TO220

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FCP190N60_GF102 Datasheet (PDF)

 0.1. Size:657K  fairchild semi
fcp190n60 gf102.pdf

FCP190N60_GF102 FCP190N60_GF102

December 2013FCP190N60_GF102N-Channel SuperFET II MOSFET600 V, 20.2 A, 199 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 170 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 57 nC)

 0.2. Size:621K  onsemi
fcp190n60 gf102.pdf

FCP190N60_GF102 FCP190N60_GF102

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 4.1. Size:650K  fairchild semi
fcp190n60 fcpf190n60.pdf

FCP190N60_GF102 FCP190N60_GF102

December 2013FCP190N60 / FCPF190N60N-Channel SuperFET II MOSFET600 V, 20.2 A, 199 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 170 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 5

 4.2. Size:888K  onsemi
fcp190n60 fcpf190n60.pdf

FCP190N60_GF102 FCP190N60_GF102

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SRC60R078BS

 

 
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History: SRC60R078BS

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