Справочник MOSFET. FCP190N60_GF102

 

FCP190N60_GF102 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FCP190N60_GF102
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 208 W
   Предельно допустимое напряжение сток-исток |Uds|: 600 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3.5 V
   Максимально допустимый постоянный ток стока |Id|: 20.2 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 57 nC
   Время нарастания (tr): 10 ns
   Выходная емкость (Cd): 1630 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.199 Ohm
   Тип корпуса: TO220

 Аналог (замена) для FCP190N60_GF102

 

 

FCP190N60_GF102 Datasheet (PDF)

 0.1. Size:657K  fairchild semi
fcp190n60 gf102.pdf

FCP190N60_GF102 FCP190N60_GF102

December 2013FCP190N60_GF102N-Channel SuperFET II MOSFET600 V, 20.2 A, 199 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 170 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 57 nC)

 0.2. Size:621K  onsemi
fcp190n60 gf102.pdf

FCP190N60_GF102 FCP190N60_GF102

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 4.1. Size:650K  fairchild semi
fcp190n60 fcpf190n60.pdf

FCP190N60_GF102 FCP190N60_GF102

December 2013FCP190N60 / FCPF190N60N-Channel SuperFET II MOSFET600 V, 20.2 A, 199 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 170 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 5

 4.2. Size:888K  onsemi
fcp190n60 fcpf190n60.pdf

FCP190N60_GF102 FCP190N60_GF102

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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