FCP360N65S3R0 Todos los transistores

 

FCP360N65S3R0 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FCP360N65S3R0

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 15 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de FCP360N65S3R0 MOSFET

- Selecciónⓘ de transistores por parámetros

 

FCP360N65S3R0 datasheet

 ..1. Size:422K  onsemi
fcp360n65s3r0.pdf pdf_icon

FCP360N65S3R0

FCP360N65S3R0 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailor

 9.1. Size:408K  fairchild semi
fcp36n60n.pdf pdf_icon

FCP360N65S3R0

November 2010 SupreMOSTM FCP36N60N tm N-Channel MOSFET 600V, 36A, 90m Features Description RDS(on) = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 86nC) process that differentiates it from preceding multi-epi based technologies.

 9.2. Size:953K  onsemi
fcp36n60n fcpf36n60nt.pdf pdf_icon

FCP360N65S3R0

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.3. Size:207K  inchange semiconductor
fcp36n60n.pdf pdf_icon

FCP360N65S3R0

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCP36N60N FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIMU

Otros transistores... FCMT180N65S3 , FCMT250N65S3 , FCP125N65S3R0 , FCP165N65S3 , FCP165N65S3R0 , FCP190N60_GF102 , FCP190N65S3R0 , FCP220N80 , 10N60 , FCP400N80Z , FCP600N65S3R0 , FCPF165N65S3R0L , FCPF190N60-F152 , FCPF190N65S3L1 , FCPF190N65S3R0L , FCPF250N65S3R0L , FCPF360N65S3R0L .

History: BSC350N20NSFD | IRFU3704 | RU6035M3 | FDS6675B | ET2N7002K | AOD476 | FCP400N80Z

 

 

 

 

↑ Back to Top
.