All MOSFET. FCP360N65S3R0 Datasheet

 

FCP360N65S3R0 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FCP360N65S3R0
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO220

 FCP360N65S3R0 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCP360N65S3R0 Datasheet (PDF)

 ..1. Size:422K  onsemi
fcp360n65s3r0.pdf

FCP360N65S3R0
FCP360N65S3R0

FCP360N65S3R0MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 10 A, 360 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailor

 9.1. Size:408K  fairchild semi
fcp36n60n.pdf

FCP360N65S3R0
FCP360N65S3R0

November 2010SupreMOSTMFCP36N60NtmN-Channel MOSFET 600V, 36A, 90mFeatures Description RDS(on) = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 86nC)process that differentiates it from preceding multi-epi based technologies.

 9.2. Size:953K  onsemi
fcp36n60n fcpf36n60nt.pdf

FCP360N65S3R0
FCP360N65S3R0

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.3. Size:207K  inchange semiconductor
fcp36n60n.pdf

FCP360N65S3R0
FCP360N65S3R0

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCP36N60NFEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMU

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: AP09N20BGI-HF | DMN6013LFG | ZXMP3F30FH

 

 
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