FCP600N65S3R0 Todos los transistores

 

FCP600N65S3R0 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FCP600N65S3R0

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 54 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 10 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO220

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FCP600N65S3R0 datasheet

 ..1. Size:367K  onsemi
fcp600n65s3r0.pdf pdf_icon

FCP600N65S3R0

MOSFET Power, N-Channel, SUPERFET[ III, Easy Drive 650 V, 600 mW, 6 A FCP600N65S3R0 Description SUPERFET III MOSFET is ON Semiconductor s brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailor

 6.1. Size:629K  fairchild semi
fcp600n60z fcpf600n60z.pdf pdf_icon

FCP600N65S3R0

November 2013 FCP600N60Z / FCPF600N60Z N-Channel SuperFET II MOSFET 600 V, 7.4 A, 600 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 510 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg =

 6.2. Size:807K  onsemi
fcp600n60z fcpf600n60z.pdf pdf_icon

FCP600N65S3R0

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.3. Size:257K  inchange semiconductor
fcp600n60z.pdf pdf_icon

FCP600N65S3R0

isc N-Channel MOSFET Transistor FCP600N60Z FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

Otros transistores... FCP125N65S3R0 , FCP165N65S3 , FCP165N65S3R0 , FCP190N60_GF102 , FCP190N65S3R0 , FCP220N80 , FCP360N65S3R0 , FCP400N80Z , IRFB4115 , FCPF165N65S3R0L , FCPF190N60-F152 , FCPF190N65S3L1 , FCPF190N65S3R0L , FCPF250N65S3R0L , FCPF360N65S3R0L , FCPF36N60NT , FCPF380N60_F152 .

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