FCP600N65S3R0 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FCP600N65S3R0
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 54 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 6 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 11 nC
Время нарастания (tr): 9 ns
Выходная емкость (Cd): 10 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.6 Ohm
Тип корпуса: TO220
Аналог (замена) для FCP600N65S3R0
FCP600N65S3R0 Datasheet (PDF)
fcp600n65s3r0.pdf
MOSFET Power, N-Channel,SUPERFET[ III, Easy Drive650 V, 600 mW, 6 AFCP600N65S3R0DescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailor
fcp600n60z fcpf600n60z.pdf
November 2013FCP600N60Z / FCPF600N60ZN-Channel SuperFET II MOSFET600 V, 7.4 A, 600 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 510 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg =
fcp600n60z fcpf600n60z.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcp600n60z.pdf
isc N-Channel MOSFET Transistor FCP600N60ZFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
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