FCPF380N60_F152 Todos los transistores

 

FCPF380N60_F152 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FCPF380N60_F152
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 30 nC
   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 905 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: TO220F

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FCPF380N60_F152 Datasheet (PDF)

 0.1. Size:290K  onsemi
fcpf380n60 f152.pdf

FCPF380N60_F152
FCPF380N60_F152

July 2013FCPF380N60_F152N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 mFeatures Description 650 V @TJ = 150C SuperFETII MOSFET is Fairchild Semiconductors first gener-ation of high voltage super-junction (SJ) MOSFET family that is Max. RDS(on) = 380 mutilizing charge balance technology for outstanding low on-resis- Ultra low gate charge (typ. Qg = 30

 4.1. Size:624K  fairchild semi
fcp380n60e fcpf380n60e.pdf

FCPF380N60_F152
FCPF380N60_F152

November 2013FCP380N60E / FCPF380N60E N-Channel SuperFET II Easy-Drive MOSFET600 V, 10.2 A, 380 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 320 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charg

 4.2. Size:637K  fairchild semi
fcp380n60 fcpf380n60.pdf

FCPF380N60_F152
FCPF380N60_F152

November 2013FCP380N60 / FCPF380N60N-Channel SuperFET II MOSFET600 V, 10.2 A, 380 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 330 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 3

 4.3. Size:802K  onsemi
fcp380n60e fcpf380n60e.pdf

FCPF380N60_F152
FCPF380N60_F152

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 4.4. Size:540K  onsemi
fcp380n60 fcpf380n60.pdf

FCPF380N60_F152
FCPF380N60_F152

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 4.5. Size:202K  inchange semiconductor
fcpf380n60.pdf

FCPF380N60_F152
FCPF380N60_F152

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCPF380N60FEATURESWith TO-220F packagingLow switching lossUltra low gate chargeEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsDC-DC convertersUninterruptible power supplyABSOLUTE MAXIMUM RAT

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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