Справочник MOSFET. FCPF380N60_F152

 

FCPF380N60_F152 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FCPF380N60_F152
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 31 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 30 nC
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 905 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для FCPF380N60_F152

 

 

FCPF380N60_F152 Datasheet (PDF)

 0.1. Size:290K  onsemi
 fcpf380n60 f152.pdf

FCPF380N60_F152 FCPF380N60_F152

July 2013FCPF380N60_F152N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 mFeatures Description 650 V @TJ = 150C SuperFETII MOSFET is Fairchild Semiconductors first gener-ation of high voltage super-junction (SJ) MOSFET family that is Max. RDS(on) = 380 mutilizing charge balance technology for outstanding low on-resis- Ultra low gate charge (typ. Qg = 30

 4.1. Size:624K  fairchild semi
 fcp380n60e fcpf380n60e.pdf

FCPF380N60_F152 FCPF380N60_F152

November 2013FCP380N60E / FCPF380N60E N-Channel SuperFET II Easy-Drive MOSFET600 V, 10.2 A, 380 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 320 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charg

 4.2. Size:637K  fairchild semi
 fcp380n60 fcpf380n60.pdf

FCPF380N60_F152 FCPF380N60_F152

November 2013FCP380N60 / FCPF380N60N-Channel SuperFET II MOSFET600 V, 10.2 A, 380 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 330 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 3

 4.3. Size:802K  onsemi
 fcp380n60e fcpf380n60e.pdf

FCPF380N60_F152 FCPF380N60_F152

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 4.4. Size:540K  onsemi
 fcp380n60 fcpf380n60.pdf

FCPF380N60_F152 FCPF380N60_F152

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 4.5. Size:202K  inchange semiconductor
 fcpf380n60.pdf

FCPF380N60_F152 FCPF380N60_F152

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCPF380N60FEATURESWith TO-220F packagingLow switching lossUltra low gate chargeEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsDC-DC convertersUninterruptible power supplyABSOLUTE MAXIMUM RAT

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