FDB3632-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDB3632-F085
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 310 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 80 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 84 nC
Tiempo de subida (tr): 39 nS
Conductancia de drenaje-sustrato (Cd): 820 pF
Resistencia entre drenaje y fuente RDS(on): 0.009 Ohm
Paquete / Cubierta: TO263AB
Búsqueda de reemplazo de MOSFET FDB3632-F085
FDB3632-F085 Datasheet (PDF)
fdb3632-f085.pdf
FDB3632-F085N-Channel PowerTrench MOSFET Applications100V, 80A, 9m DC/DC converters and Off-Line UPSFeatures Distributed Power Architectures and VRMs rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A Primary Switch for 24V and 48V Systems Qg(tot) = 84nC (Typ.), VGS = 10V High Voltage Synchronous Rectifier Low Miller Charge Low QRR Body Diode
fdb3632 f085.pdf
March 2012FDB3632_F085N-Channel PowerTrench MOSFET100V, 80A, 9mFeatures Applications rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A DC/DC converters and Off-Line UPS Qg(tot) = 84nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Recti
fdb3632 fdp3632 fdi3632 fdh3632.pdf
December 2008FDB3632 / FDP3632 / FDI3632 / FDH3632N-Channel PowerTrench MOSFET100V, 80A, 9mFeatures Applications rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A DC/DC converters and Off-Line UPS Qg(tot) = 84nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode Hi
fdh3632 fdp3632 fdb3632.pdf
MOSFET Power, N-Channel,POWERTRENCH)100 V, 80 A, 9 mWFDH3632, FDP3632,FDB3632www.onsemi.comFeatures RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A Qg (tot) = 84 nC (Typ.), VGS = 10 VVDSS RDS(ON) MAX ID MAX Low Miller Charge100 V 9 mW 80 A Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse)D These Devices are Pb-Free and are R
fdb3632.pdf
isc N-Channel MOSFET Transistor FDB3632FEATURESWith TO-263 packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 9m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
