FDB3632-F085 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDB3632-F085
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 310 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 84 nC
trⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 820 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO263AB
FDB3632-F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDB3632-F085 Datasheet (PDF)
fdb3632-f085.pdf
FDB3632-F085N-Channel PowerTrench MOSFET Applications100V, 80A, 9m DC/DC converters and Off-Line UPSFeatures Distributed Power Architectures and VRMs rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A Primary Switch for 24V and 48V Systems Qg(tot) = 84nC (Typ.), VGS = 10V High Voltage Synchronous Rectifier Low Miller Charge Low QRR Body Diode
fdb3632 f085.pdf
March 2012FDB3632_F085N-Channel PowerTrench MOSFET100V, 80A, 9mFeatures Applications rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A DC/DC converters and Off-Line UPS Qg(tot) = 84nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Recti
fdb3632 fdp3632 fdi3632 fdh3632.pdf
December 2008FDB3632 / FDP3632 / FDI3632 / FDH3632N-Channel PowerTrench MOSFET100V, 80A, 9mFeatures Applications rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A DC/DC converters and Off-Line UPS Qg(tot) = 84nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode Hi
fdh3632 fdp3632 fdb3632.pdf
MOSFET Power, N-Channel,POWERTRENCH)100 V, 80 A, 9 mWFDH3632, FDP3632,FDB3632www.onsemi.comFeatures RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A Qg (tot) = 84 nC (Typ.), VGS = 10 VVDSS RDS(ON) MAX ID MAX Low Miller Charge100 V 9 mW 80 A Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse)D These Devices are Pb-Free and are R
fdb3632.pdf
isc N-Channel MOSFET Transistor FDB3632FEATURESWith TO-263 packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 9m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: STB45N30M5
