FDB86360-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDB86360-F085
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 333 W
Voltaje máximo drenador - fuente |Vds|: 80 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 110 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 207 nC
Tiempo de subida (tr): 197 nS
Conductancia de drenaje-sustrato (Cd): 4700 pF
Resistencia entre drenaje y fuente RDS(on): 0.0018 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de MOSFET FDB86360-F085
FDB86360-F085 Datasheet (PDF)
fdb86360-f085.pdf
FDB86360-F085N-Channel Power Trench MOSFET80V, 110A, 1.8mFeatures Typ rDS(on) = 1.5m at VGS = 10V, ID = 80AG Typ Qg(tot) = 207nC at VGS = 10V, ID = 80AGS UIS Capability RoHS CompliantTO-263S Qualified to AEC Q101FDB SERIESApplications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator Primar
fdb86360 f085.pdf
January 2014FDB86360_F085N-Channel Power Trench MOSFETDD80V, 110A, 1.8m Features Typ rDS(on) = 1.5m at VGS = 10V, ID = 80A G Typ Qg(tot) = 207nC at VGS = 10V, ID = 80AGS UIS Capability RoHS CompliantTO-263S Qualified to AEC Q101FDB SERIESApplications Forcurrentpackagedrawing,pleaserefertotheFairchildwebsiteatwww.fairchildsemi.c
fdb86366 f085.pdf
December 2014FDB86366_F085N-Channel PowerTrench MOSFET80 V, 110 A, 3.6 m Features Typical RDS(on) = 2.8 m at VGS = 10V, ID = 80 A DD Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101GApplications GS Automotive Engine ControlTO-263S PowerTrain ManagementFDB SERIES Solenoid and Motor Drivers In
fdb86363 f085.pdf
June 2014FDB86363_F085N-Channel PowerTrench MOSFETDD80 V, 110 A, 2.4 m Features Typical RDS(on) = 2.0 m at VGS = 10V, ID = 80 A G Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A UIS Capability GS RoHS CompliantTO-263S Qualified to AEC Q101FDB SERIESApplications Forcurrentpackagedrawing,pleaserefertotheFairchild Automotive Engine Co
fdb86366-f085.pdf
FDB86366-F085N-Channel PowerTrench MOSFET 80 V, 110 A, 3.6 mFeatures Typical RDS(on) = 2.8 m at VGS = 10V, ID = 80 ADD Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101GApplicationsGS Automotive Engine Control PowerTrain Management TO-263SFDB SERIES Solenoid and Motor Drivers Integrated Starter/A
fdb86363-f085.pdf
MOSFET - POWERTRENCH),N-Channel80 V, 110 A, 2.4 mWFDB86363-F085Features Typical RDS(on) = 2.0 mW at VGS = 10 V, ID = 80 Awww.onsemi.com Typical Qg(tot) = 131 nC at VGS = 10 V, ID = 80 A UIS CapabilityN-Channel AEC-Q101 Qualified and PPAP Capable(Pin 2) This Device is Pb-Free, Halide Free and is RoHS CompliantDApplications Automotive Engine Control
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: IPB033N10N5LF | NCEP055N12D
