FDB86360-F085 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDB86360-F085
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 333 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 110 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 207 nC
trⓘ - Время нарастания: 197 ns
Cossⓘ - Выходная емкость: 4700 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0018 Ohm
Тип корпуса: TO263
Аналог (замена) для FDB86360-F085
FDB86360-F085 Datasheet (PDF)
fdb86360-f085.pdf
FDB86360-F085N-Channel Power Trench MOSFET80V, 110A, 1.8mFeatures Typ rDS(on) = 1.5m at VGS = 10V, ID = 80AG Typ Qg(tot) = 207nC at VGS = 10V, ID = 80AGS UIS Capability RoHS CompliantTO-263S Qualified to AEC Q101FDB SERIESApplications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator Primar
fdb86360 f085.pdf
January 2014FDB86360_F085N-Channel Power Trench MOSFETDD80V, 110A, 1.8m Features Typ rDS(on) = 1.5m at VGS = 10V, ID = 80A G Typ Qg(tot) = 207nC at VGS = 10V, ID = 80AGS UIS Capability RoHS CompliantTO-263S Qualified to AEC Q101FDB SERIESApplications Forcurrentpackagedrawing,pleaserefertotheFairchildwebsiteatwww.fairchildsemi.c
fdb86366 f085.pdf
December 2014FDB86366_F085N-Channel PowerTrench MOSFET80 V, 110 A, 3.6 m Features Typical RDS(on) = 2.8 m at VGS = 10V, ID = 80 A DD Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101GApplications GS Automotive Engine ControlTO-263S PowerTrain ManagementFDB SERIES Solenoid and Motor Drivers In
fdb86363 f085.pdf
June 2014FDB86363_F085N-Channel PowerTrench MOSFETDD80 V, 110 A, 2.4 m Features Typical RDS(on) = 2.0 m at VGS = 10V, ID = 80 A G Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A UIS Capability GS RoHS CompliantTO-263S Qualified to AEC Q101FDB SERIESApplications Forcurrentpackagedrawing,pleaserefertotheFairchild Automotive Engine Co
fdb86366-f085.pdf
FDB86366-F085N-Channel PowerTrench MOSFET 80 V, 110 A, 3.6 mFeatures Typical RDS(on) = 2.8 m at VGS = 10V, ID = 80 ADD Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101GApplicationsGS Automotive Engine Control PowerTrain Management TO-263SFDB SERIES Solenoid and Motor Drivers Integrated Starter/A
fdb86363-f085.pdf
MOSFET - POWERTRENCH),N-Channel80 V, 110 A, 2.4 mWFDB86363-F085Features Typical RDS(on) = 2.0 mW at VGS = 10 V, ID = 80 Awww.onsemi.com Typical Qg(tot) = 131 nC at VGS = 10 V, ID = 80 A UIS CapabilityN-Channel AEC-Q101 Qualified and PPAP Capable(Pin 2) This Device is Pb-Free, Halide Free and is RoHS CompliantDApplications Automotive Engine Control
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918