FDB9403-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDB9403-F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 333 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 164 nC
   trⓘ - Tiempo de subida: 19.5 nS
   Cossⓘ - Capacitancia de salida: 3195 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0012 Ohm
   Paquete / Cubierta: TO263AB

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FDB9403-F085 Datasheet (PDF)

..1. Size:340K onsemi
fdb9403-f085.pdf

FDB9403-F085N-Channel Power Trench MOSFET DD40V, 110A, 1.2m Features Typ rDS(on) = 1m at VGS = 10V, ID = 80AG Typ Qg(tot) = 164nC at VGS = 10V, ID = 80AGS UIS CapabilityTO-263ABS RoHS CompliantFDB SERIES Qualified to AEC Q101Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrate

7.1. Size:485K fairchild semi
fdb9403 f085.pdf

Aug2012FDB9403_F085N-Channel Power Trench MOSFET40V, 110A, 1.2mDDFeatures Typ rDS(on) = 1m at VGS = 10V, ID = 80A Typ Qg(tot) = 164nC at VGS = 10V, ID = 80AG UIS Capability RoHS CompliantGS Qualified to AEC Q101TO-263ABSFDB SERIESApplications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering

7.2. Size:447K onsemi
fdb9403l-f085.pdf

FDB9403L-F085N-Channel Logic Level PowerTrench MOSFET DD40 V, 110 A, 1.2 mFeatures Typical RDS(on) = 1.0 m at VGS = 10V, ID = 80 AG Typical Qg(tot) = 186 nC at VGS = 10V, ID = 80 AGS UIS CapabilityTO-263 RoHS CompliantSFDB SERIES Qualified to AEC Q101Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integr

7.3. Size:288K inchange semiconductor
fdb9403.pdf

isc N-Channel MOSFET Transistor FDB9403FEATURESDrain Current : I =93A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

7.4. Size:287K inchange semiconductor
fdb9403l.pdf

isc N-Channel MOSFET Transistor FDB9403LFEATURESDrain Current : I =110A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =1.2m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

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