All MOSFET. FDB9403-F085 Datasheet

 

FDB9403-F085 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDB9403-F085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 164 nC
   trⓘ - Rise Time: 19.5 nS
   Cossⓘ - Output Capacitance: 3195 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm
   Package: TO263AB

 FDB9403-F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDB9403-F085 Datasheet (PDF)

 ..1. Size:340K  onsemi
fdb9403-f085.pdf

FDB9403-F085
FDB9403-F085

FDB9403-F085N-Channel Power Trench MOSFET DD40V, 110A, 1.2m Features Typ rDS(on) = 1m at VGS = 10V, ID = 80AG Typ Qg(tot) = 164nC at VGS = 10V, ID = 80AGS UIS CapabilityTO-263ABS RoHS CompliantFDB SERIES Qualified to AEC Q101Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrate

 7.1. Size:485K  fairchild semi
fdb9403 f085.pdf

FDB9403-F085
FDB9403-F085

Aug2012FDB9403_F085N-Channel Power Trench MOSFET40V, 110A, 1.2mDDFeatures Typ rDS(on) = 1m at VGS = 10V, ID = 80A Typ Qg(tot) = 164nC at VGS = 10V, ID = 80AG UIS Capability RoHS CompliantGS Qualified to AEC Q101TO-263ABSFDB SERIESApplications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering

 7.2. Size:447K  onsemi
fdb9403l-f085.pdf

FDB9403-F085
FDB9403-F085

FDB9403L-F085N-Channel Logic Level PowerTrench MOSFET DD40 V, 110 A, 1.2 mFeatures Typical RDS(on) = 1.0 m at VGS = 10V, ID = 80 AG Typical Qg(tot) = 186 nC at VGS = 10V, ID = 80 AGS UIS CapabilityTO-263 RoHS CompliantSFDB SERIES Qualified to AEC Q101Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integr

 7.3. Size:288K  inchange semiconductor
fdb9403.pdf

FDB9403-F085
FDB9403-F085

isc N-Channel MOSFET Transistor FDB9403FEATURESDrain Current : I =93A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

 7.4. Size:287K  inchange semiconductor
fdb9403l.pdf

FDB9403-F085
FDB9403-F085

isc N-Channel MOSFET Transistor FDB9403LFEATURESDrain Current : I =110A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =1.2m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 10N65K | AP2323GN-HF | CS2N70HP | IPT210N25NFD

 

 
Back to Top