FDBL0260N100 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDBL0260N100
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 200 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 83 nC
trⓘ - Tiempo de subida: 34 nS
Cossⓘ - Capacitancia de salida: 1330 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
Paquete / Cubierta: MO-299A
Búsqueda de reemplazo de MOSFET FDBL0260N100
FDBL0260N100 Datasheet (PDF)
fdbl0260n100.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdbl0210n80.pdf
April 2015FDBL0210N80N-Channel PowerTrench MOSFET80 V, 240 A, 2.0 m Features Typical RDS(on) = 1.5 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 130 nC at VGS = 10V, ID = 80 AD UIS Capability RoHS CompliantApplications Industrial Motor DriveG Industrial Power Supply Industrial Automations Battery Operated toolsS Battery ProtectionForcurrentpackaged
fdbl0240n100.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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MOSFET N-Channel,POWERTRENCH)100 V, 300 A, 2.0 mWFDBL0200N100Featureswww.onsemi.com Typical RDS(on) = 1.5 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 95 nC at VGS = 10 V, ID = 80 AVDSS RDS(ON) MAX ID MAX UIS Capability100 V 2.0 mW @ 10 V 300 A This Device is Pb-Free and is RoHS CompliantApplications Industrial Motor Drive Industrial Power Supp
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918