FDBL0260N100. Аналоги и основные параметры

Наименование производителя: FDBL0260N100

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 250 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 200 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 34 ns

Cossⓘ - Выходная емкость: 1330 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm

Тип корпуса: MO-299A

Аналог (замена) для FDBL0260N100

- подборⓘ MOSFET транзистора по параметрам

 

FDBL0260N100 даташит

 ..1. Size:626K  onsemi
 fdbl0260n100.pdf pdf_icon

FDBL0260N100

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:379K  fairchild semi
 fdbl0210n80.pdf pdf_icon

FDBL0260N100

April 2015 FDBL0210N80 N-Channel PowerTrench MOSFET 80 V, 240 A, 2.0 m Features Typical RDS(on) = 1.5 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 130 nC at VGS = 10V, ID = 80 A D UIS Capability RoHS Compliant Applications Industrial Motor Drive G Industrial Power Supply Industrial Automations Battery Operated tools S Battery Protection For current package d

 8.2. Size:520K  onsemi
 fdbl0240n100.pdf pdf_icon

FDBL0260N100

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.3. Size:561K  onsemi
 fdbl0200n100.pdf pdf_icon

FDBL0260N100

MOSFET N-Channel, POWERTRENCH) 100 V, 300 A, 2.0 mW FDBL0200N100 Features www.onsemi.com Typical RDS(on) = 1.5 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 95 nC at VGS = 10 V, ID = 80 A VDSS RDS(ON) MAX ID MAX UIS Capability 100 V 2.0 mW @ 10 V 300 A This Device is Pb-Free and is RoHS Compliant Applications Industrial Motor Drive Industrial Power Supp

ПОКАЗАТЬ ЕЩЁ

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