FDBL86063 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDBL86063

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 357 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 240 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 3220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm

Encapsulados: H-PSOF8L

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FDBL86063 datasheet

 ..1. Size:462K  onsemi
 fdbl86063.pdf pdf_icon

FDBL86063

MOSFET - POWERTRENCH), N-Channel 100 V, 240 A, 2.6 mW FDBL86063 Features Typical RDS(on) = 2 mW at VGS = 10 V, ID = 80 A www.onsemi.com Typical Qg(tot) = 73 nC at VGS = 10 V, ID = 80 A UIS Capability This Device is Pb-Free and is RoHS Compliant Typical Applications Industrial Battery Switch Primary Switch for 12 V Systems H-PSOF8L 11.68x9.80 CASE 100CU MAR

 0.1. Size:684K  onsemi
 fdbl86063-f085.pdf pdf_icon

FDBL86063

FDBL86063-F085 N-Channel Power Trench MOSFET 100 V, 240 A, 2.6 m Features Typical RDS(on) = 2 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 73 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integr

 6.1. Size:280K  onsemi
 fdbl86066-f085.pdf pdf_icon

FDBL86063

FDBL86066-F085 N Channel POWERTRENCH) MOSFET 100 V, 240 A, 4.1 mW Features www.onsemi.com Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 47 nC at VGS = 10 V, ID = 80 A UIS Capability VDSS RDS(ON) MAX ID MAX Qualified to AEC Q101 100 V 4.1 mW @ 10 V 240 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant D Application

 6.2. Size:501K  onsemi
 fdbl86062-f085.pdf pdf_icon

FDBL86063

FDBL86062-F085 N-Channel POWERTRENCH) MOSFET 100 V, 300 A, 2.0 mW www.onsemi.com Features Typical RDS(on) = 1.5 mW at VGS = 10 V, ID = 80 A D Typical Qg(tot) = 95 nC at VGS = 10 V, ID = 80 A UIS Capability Qualified to AEC Q101 G This Device is Pb-Free and is RoHS Compliant Applications S Automotive Engine Control PowerTrain Management Solenoid a

MOSTRAR MÁS

Otros transistores... FDB9409L-F085, FDB9503L-F085, FDB9506L-F085, FDB9509L-F085, FDBL0200N100, FDBL0240N100, FDBL0260N100, FDBL86062-F085, STF13NM60N, FDBL86063-F085, FDBL86066-F085, FDBL86210-F085, FDBL86361-F085, FDBL86363-F085, FDBL86366-F085, FDBL86561-F085, FDBL86563-F085