All MOSFET. FDBL86063 Datasheet

 

FDBL86063 Datasheet and Replacement


   Type Designator: FDBL86063
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 357 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 240 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 73 nC
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 3220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: H-PSOF8L
 

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FDBL86063 Datasheet (PDF)

 ..1. Size:462K  onsemi
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FDBL86063

MOSFET - POWERTRENCH),N-Channel100 V, 240 A, 2.6 mWFDBL86063Features Typical RDS(on) = 2 mW at VGS = 10 V, ID = 80 Awww.onsemi.com Typical Qg(tot) = 73 nC at VGS = 10 V, ID = 80 A UIS Capability This Device is Pb-Free and is RoHS CompliantTypical Applications Industrial Battery Switch Primary Switch for 12 V SystemsH-PSOF8L 11.68x9.80CASE 100CUMAR

 0.1. Size:684K  onsemi
fdbl86063-f085.pdf pdf_icon

FDBL86063

FDBL86063-F085N-Channel Power Trench MOSFET100 V, 240 A, 2.6 mFeatures Typical RDS(on) = 2 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 73 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integr

 6.1. Size:280K  onsemi
fdbl86066-f085.pdf pdf_icon

FDBL86063

FDBL86066-F085NChannel POWERTRENCH)MOSFET100 V, 240 A, 4.1 mWFeatureswww.onsemi.com Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 47 nC at VGS = 10 V, ID = 80 A UIS Capability VDSS RDS(ON) MAX ID MAX Qualified to AEC Q101100 V 4.1 mW @ 10 V 240 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantDApplication

 6.2. Size:501K  onsemi
fdbl86062-f085.pdf pdf_icon

FDBL86063

FDBL86062-F085N-ChannelPOWERTRENCH) MOSFET100 V, 300 A, 2.0 mWwww.onsemi.comFeatures Typical RDS(on) = 1.5 mW at VGS = 10 V, ID = 80 AD Typical Qg(tot) = 95 nC at VGS = 10 V, ID = 80 A UIS Capability Qualified to AEC Q101G This Device is Pb-Free and is RoHS CompliantApplicationsS Automotive Engine Control PowerTrain Management Solenoid a

Datasheet: FDB9409L-F085 , FDB9503L-F085 , FDB9506L-F085 , FDB9509L-F085 , FDBL0200N100 , FDBL0240N100 , FDBL0260N100 , FDBL86062-F085 , AON7403 , FDBL86063-F085 , FDBL86066-F085 , FDBL86210-F085 , FDBL86361-F085 , FDBL86363-F085 , FDBL86366-F085 , FDBL86561-F085 , FDBL86563-F085 .

History: FDBL86210-F085

Keywords - FDBL86063 MOSFET datasheet

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