FDD86369 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDD86369
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 150 W
Voltaje máximo drenador - fuente |Vds|: 80 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 90 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 36 nC
Tiempo de subida (tr): 34 nS
Conductancia de drenaje-sustrato (Cd): 430 pF
Resistencia entre drenaje y fuente RDS(on): 0.0079 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET FDD86369
FDD86369 Datasheet (PDF)
fdd86369 f085.pdf
May 2015FDD86369_F085N-Channel PowerTrench MOSFET80 V, 90 A, 7.9 m Features Typical RDS(on) = 5.9 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplications S Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Integ
fdd86369.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdd86369.pdf
isc N-Channel MOSFET Transistor FDD86369FEATURESDrain Current : I = 90A@ T =25D CDrain Source Voltage: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 7.9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
fdd86369-f085.pdf
FDD86369-F085N-Channel PowerTrench MOSFET 80 V, 90 A, 7.9 mFeatures Typical RDS(on) = 5.9 m at VGS = 10V, ID = 80 AD Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplicationsS Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Starte
fdd86367 f085.pdf
May 2015FDD86367_F085N-Channel PowerTrench MOSFET80 V, 100 A, 4.2 m Features Typical RDS(on) = 3.3 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 68 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplications S Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor DriversForc
fdd86367-f085.pdf
FDD86367-F085N-Channel PowerTrench MOSFET 80 V, 100 A, 4.2 mFeatures Typical RDS(on) = 3.3 m at VGS = 10V, ID = 80 AD Typical Qg(tot) = 68 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplicationsS Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Start
fdd86367.pdf
MOSFET N-Channel,POWERTRENCH)80 V, 100 A, 4.2 mWFDD86367Featureswww.onsemi.com Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 68 nC at VGS = 10 V, ID = 80 AD UIS Capability This Device is Pb-Free, Halogen Free/BFR Free and is RoHSCompliantGApplications PowerTrain ManagementS Solenoid and Motor DriversN-Channel Int
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