FDD86369. Аналоги и основные параметры

Наименование производителя: FDD86369

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 150 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 90 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 34 ns

Cossⓘ - Выходная емкость: 430 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0079 Ohm

Тип корпуса: TO252

Аналог (замена) для FDD86369

- подборⓘ MOSFET транзистора по параметрам

 

FDD86369 даташит

 ..1. Size:456K  fairchild semi
fdd86369 f085.pdfpdf_icon

FDD86369

May 2015 FDD86369_F085 N-Channel PowerTrench MOSFET 80 V, 90 A, 7.9 m Features Typical RDS(on) = 5.9 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Integ

 ..2. Size:1055K  onsemi
fdd86369.pdfpdf_icon

FDD86369

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:286K  inchange semiconductor
fdd86369.pdfpdf_icon

FDD86369

isc N-Channel MOSFET Transistor FDD86369 FEATURES Drain Current I = 90A@ T =25 D C Drain Source Voltage V = 80V(Min) DSS Static Drain-Source On-Resistance R = 7.9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 0.1. Size:440K  onsemi
fdd86369-f085.pdfpdf_icon

FDD86369

FDD86369-F085 N-Channel PowerTrench MOSFET 80 V, 90 A, 7.9 m Features Typical RDS(on) = 5.9 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Starte

Другие IGBT... FDD5N50FTM-WS, FDD6N50TM-F085, FDD8444L-F085, FDD8447L_F085, FDD8453LZ-F085, FDD86250_F085, FDD86367, FDD86367-F085, IRF640, FDD86369-F085, FDD86380-F085, FDD86567-F085, FDD86569-F085, FDD86580-F085, FDD86581-F085, FDD8896-F085, FDD9407-F085