FDD86380-F085 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD86380-F085

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 311 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0135 Ohm

Encapsulados: TO252

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FDD86380-F085 datasheet

 ..1. Size:430K  onsemi
fdd86380-f085.pdf pdf_icon

FDD86380-F085

FDD86380-F085 N-Channel PowerTrench MOSFET 80 V, 50 A, 13.5 m D Features Typical RDS(on) = 11.2 m at VGS = 10V, ID = 50 A Typical Qg(tot) = 20 nC at VGS = 10V, ID = 50 A D UIS Capability G G RoHS Compliant S Qualified to AEC Q101 D-PAK TO-252 Applications S (TO-252) Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated S

 8.1. Size:216K  fairchild semi
fdd86326.pdf pdf_icon

FDD86380-F085

June 2010 FDD86326 N-Channel PowerTrench MOSFET 80 V, 37 A, 23 m Features Max rDS(on) = 23 m at VGS = 10 V, ID = 8 A General Description Max rDS(on) = 37 m at VGS = 6 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild High performance trench technology for extremely low rDS(on) Semiconductor s advanced Power Trench process that has been optimized for

 8.2. Size:352K  fairchild semi
fdd86367 f085.pdf pdf_icon

FDD86380-F085

May 2015 FDD86367_F085 N-Channel PowerTrench MOSFET 80 V, 100 A, 4.2 m Features Typical RDS(on) = 3.3 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 68 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers For c

 8.3. Size:456K  fairchild semi
fdd86369 f085.pdf pdf_icon

FDD86380-F085

May 2015 FDD86369_F085 N-Channel PowerTrench MOSFET 80 V, 90 A, 7.9 m Features Typical RDS(on) = 5.9 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Integ

Otros transistores... FDD8444L-F085, FDD8447L_F085, FDD8453LZ-F085, FDD86250_F085, FDD86367, FDD86367-F085, FDD86369, FDD86369-F085, IRLZ44N, FDD86567-F085, FDD86569-F085, FDD86580-F085, FDD86581-F085, FDD8896-F085, FDD9407-F085, FDD9407L-F085, FDD9409L-F085