FDD86380-F085 Todos los transistores

 

FDD86380-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDD86380-F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 311 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0135 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

FDD86380-F085 Datasheet (PDF)

 ..1. Size:430K  onsemi
fdd86380-f085.pdf pdf_icon

FDD86380-F085

FDD86380-F085N-Channel PowerTrench MOSFET 80 V, 50 A, 13.5 mDFeatures Typical RDS(on) = 11.2 m at VGS = 10V, ID = 50 A Typical Qg(tot) = 20 nC at VGS = 10V, ID = 50 AD UIS CapabilityGG RoHS CompliantS Qualified to AEC Q101D-PAKTO-252ApplicationsS(TO-252) Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated S

 8.1. Size:216K  fairchild semi
fdd86326.pdf pdf_icon

FDD86380-F085

June 2010FDD86326N-Channel PowerTrench MOSFET 80 V, 37 A, 23 mFeatures Max rDS(on) = 23 m at VGS = 10 V, ID = 8 AGeneral Description Max rDS(on) = 37 m at VGS = 6 V, ID = 4.6 AThis N-Channel MOSFET is produced using Fairchild High performance trench technology for extremely low rDS(on) Semiconductors advanced Power Trench process that has been optimized for

 8.2. Size:352K  fairchild semi
fdd86367 f085.pdf pdf_icon

FDD86380-F085

May 2015FDD86367_F085N-Channel PowerTrench MOSFET80 V, 100 A, 4.2 m Features Typical RDS(on) = 3.3 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 68 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplications S Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor DriversForc

 8.3. Size:456K  fairchild semi
fdd86369 f085.pdf pdf_icon

FDD86380-F085

May 2015FDD86369_F085N-Channel PowerTrench MOSFET80 V, 90 A, 7.9 m Features Typical RDS(on) = 5.9 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplications S Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Integ

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: CEM9936A | LSH65R1K5HT

 

 
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