FDD86380-F085 Todos los transistores

 

FDD86380-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDD86380-F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 20 nC
   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 311 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0135 Ohm
   Paquete / Cubierta: TO252

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FDD86380-F085 Datasheet (PDF)

 ..1. Size:430K  onsemi
fdd86380-f085.pdf

FDD86380-F085
FDD86380-F085

FDD86380-F085N-Channel PowerTrench MOSFET 80 V, 50 A, 13.5 mDFeatures Typical RDS(on) = 11.2 m at VGS = 10V, ID = 50 A Typical Qg(tot) = 20 nC at VGS = 10V, ID = 50 AD UIS CapabilityGG RoHS CompliantS Qualified to AEC Q101D-PAKTO-252ApplicationsS(TO-252) Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated S

 8.1. Size:216K  fairchild semi
fdd86326.pdf

FDD86380-F085
FDD86380-F085

June 2010FDD86326N-Channel PowerTrench MOSFET 80 V, 37 A, 23 mFeatures Max rDS(on) = 23 m at VGS = 10 V, ID = 8 AGeneral Description Max rDS(on) = 37 m at VGS = 6 V, ID = 4.6 AThis N-Channel MOSFET is produced using Fairchild High performance trench technology for extremely low rDS(on) Semiconductors advanced Power Trench process that has been optimized for

 8.2. Size:352K  fairchild semi
fdd86367 f085.pdf

FDD86380-F085
FDD86380-F085

May 2015FDD86367_F085N-Channel PowerTrench MOSFET80 V, 100 A, 4.2 m Features Typical RDS(on) = 3.3 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 68 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplications S Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor DriversForc

 8.3. Size:456K  fairchild semi
fdd86369 f085.pdf

FDD86380-F085
FDD86380-F085

May 2015FDD86369_F085N-Channel PowerTrench MOSFET80 V, 90 A, 7.9 m Features Typical RDS(on) = 5.9 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplications S Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Integ

 8.4. Size:421K  onsemi
fdd86367-f085.pdf

FDD86380-F085
FDD86380-F085

FDD86367-F085N-Channel PowerTrench MOSFET 80 V, 100 A, 4.2 mFeatures Typical RDS(on) = 3.3 m at VGS = 10V, ID = 80 AD Typical Qg(tot) = 68 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplicationsS Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Start

 8.5. Size:569K  onsemi
fdd86326.pdf

FDD86380-F085
FDD86380-F085

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.6. Size:403K  onsemi
fdd86367.pdf

FDD86380-F085
FDD86380-F085

MOSFET N-Channel,POWERTRENCH)80 V, 100 A, 4.2 mWFDD86367Featureswww.onsemi.com Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 68 nC at VGS = 10 V, ID = 80 AD UIS Capability This Device is Pb-Free, Halogen Free/BFR Free and is RoHSCompliantGApplications PowerTrain ManagementS Solenoid and Motor DriversN-Channel Int

 8.7. Size:1055K  onsemi
fdd86369.pdf

FDD86380-F085
FDD86380-F085

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.8. Size:440K  onsemi
fdd86369-f085.pdf

FDD86380-F085
FDD86380-F085

FDD86369-F085N-Channel PowerTrench MOSFET 80 V, 90 A, 7.9 mFeatures Typical RDS(on) = 5.9 m at VGS = 10V, ID = 80 AD Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplicationsS Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Starte

 8.9. Size:286K  inchange semiconductor
fdd86369.pdf

FDD86380-F085
FDD86380-F085

isc N-Channel MOSFET Transistor FDD86369FEATURESDrain Current : I = 90A@ T =25D CDrain Source Voltage: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 7.9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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