FDD86380-F085 MOSFET. Datasheet pdf. Equivalent

FDD86380-F085N-Channel PowerTrench MOSFET 80 V, 50 A, 13.5 mDFeatures Typical RDS(on) = 11.2 m at VGS = 10V, ID = 50 A Typical Qg(tot) = 20 nC at VGS = 10V, ID = 50 AD UIS CapabilityGG RoHS CompliantS Qualified to AEC Q101D-PAKTO-252ApplicationsS(TO-252) Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated S

June 2010FDD86326N-Channel PowerTrench MOSFET 80 V, 37 A, 23 mFeatures Max rDS(on) = 23 m at VGS = 10 V, ID = 8 AGeneral Description Max rDS(on) = 37 m at VGS = 6 V, ID = 4.6 AThis N-Channel MOSFET is produced using Fairchild High performance trench technology for extremely low rDS(on) Semiconductors advanced Power Trench process that has been optimized for

May 2015FDD86367_F085N-Channel PowerTrench MOSFET80 V, 100 A, 4.2 m Features Typical RDS(on) = 3.3 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 68 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplications S Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor DriversForc

May 2015FDD86369_F085N-Channel PowerTrench MOSFET80 V, 90 A, 7.9 m Features Typical RDS(on) = 5.9 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplications S Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Integ

FDD86367-F085N-Channel PowerTrench MOSFET 80 V, 100 A, 4.2 mFeatures Typical RDS(on) = 3.3 m at VGS = 10V, ID = 80 AD Typical Qg(tot) = 68 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplicationsS Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Start

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MOSFET N-Channel,POWERTRENCH)80 V, 100 A, 4.2 mWFDD86367Featureswww.onsemi.com Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 68 nC at VGS = 10 V, ID = 80 AD UIS Capability This Device is Pb-Free, Halogen Free/BFR Free and is RoHSCompliantGApplications PowerTrain ManagementS Solenoid and Motor DriversN-Channel Int

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDD86369-F085N-Channel PowerTrench MOSFET 80 V, 90 A, 7.9 mFeatures Typical RDS(on) = 5.9 m at VGS = 10V, ID = 80 AD Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplicationsS Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Starte

isc N-Channel MOSFET Transistor FDD86369FEATURESDrain Current : I = 90A@ T =25D CDrain Source Voltage: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 7.9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno