FDD86380-F085 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD86380-F085
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 311 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: TO252
FDD86380-F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD86380-F085 Datasheet (PDF)
fdd86380-f085.pdf
FDD86380-F085N-Channel PowerTrench MOSFET 80 V, 50 A, 13.5 mDFeatures Typical RDS(on) = 11.2 m at VGS = 10V, ID = 50 A Typical Qg(tot) = 20 nC at VGS = 10V, ID = 50 AD UIS CapabilityGG RoHS CompliantS Qualified to AEC Q101D-PAKTO-252ApplicationsS(TO-252) Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated S
fdd86326.pdf
June 2010FDD86326N-Channel PowerTrench MOSFET 80 V, 37 A, 23 mFeatures Max rDS(on) = 23 m at VGS = 10 V, ID = 8 AGeneral Description Max rDS(on) = 37 m at VGS = 6 V, ID = 4.6 AThis N-Channel MOSFET is produced using Fairchild High performance trench technology for extremely low rDS(on) Semiconductors advanced Power Trench process that has been optimized for
fdd86367 f085.pdf
May 2015FDD86367_F085N-Channel PowerTrench MOSFET80 V, 100 A, 4.2 m Features Typical RDS(on) = 3.3 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 68 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplications S Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor DriversForc
fdd86369 f085.pdf
May 2015FDD86369_F085N-Channel PowerTrench MOSFET80 V, 90 A, 7.9 m Features Typical RDS(on) = 5.9 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplications S Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Integ
fdd86367-f085.pdf
FDD86367-F085N-Channel PowerTrench MOSFET 80 V, 100 A, 4.2 mFeatures Typical RDS(on) = 3.3 m at VGS = 10V, ID = 80 AD Typical Qg(tot) = 68 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplicationsS Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Start
fdd86326.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdd86367.pdf
MOSFET N-Channel,POWERTRENCH)80 V, 100 A, 4.2 mWFDD86367Featureswww.onsemi.com Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 68 nC at VGS = 10 V, ID = 80 AD UIS Capability This Device is Pb-Free, Halogen Free/BFR Free and is RoHSCompliantGApplications PowerTrain ManagementS Solenoid and Motor DriversN-Channel Int
fdd86369.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdd86369-f085.pdf
FDD86369-F085N-Channel PowerTrench MOSFET 80 V, 90 A, 7.9 mFeatures Typical RDS(on) = 5.9 m at VGS = 10V, ID = 80 AD Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplicationsS Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Starte
fdd86369.pdf
isc N-Channel MOSFET Transistor FDD86369FEATURESDrain Current : I = 90A@ T =25D CDrain Source Voltage: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 7.9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
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