FDD86569-F085 Todos los transistores

 

FDD86569-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDD86569-F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 690 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
   Paquete / Cubierta: TO252
 

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FDD86569-F085 Datasheet (PDF)

 ..1. Size:446K  onsemi
fdd86569-f085.pdf pdf_icon

FDD86569-F085

FDD86569-F085N-Channel PowerTrench MOSFET 60 V, 90 A, 5.7 mDFeatures Typical RDS(on) = 4.2 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 35 nC at VGS = 10V, ID = 80 AD UIS Capability GG RoHS CompliantS Qualified to AEC Q101D-PAKTO-252Applications S(TO-252) Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starte

 7.1. Size:449K  onsemi
fdd86567-f085.pdf pdf_icon

FDD86569-F085

FDD86567-F085N-Channel PowerTrench MOSFET 60 V, 100 A, 3.2 mFeatures Typical RDS(on) = 2.6 m at VGS = 10V, ID = 80 AD Typical Qg(tot) = 63 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplicationsS Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Start

 8.1. Size:241K  fairchild semi
fdd86540.pdf pdf_icon

FDD86569-F085

February 2012FDD86540N-Channel PowerTrench MOSFET 60 V, 50 A, 4.1 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 4.1 m at VGS = 10 V, ID = 21.5 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 5 m at VGS = 8 V, ID = 19.5 Aringing of DC/DC converters using either synchronous or conventional

 8.2. Size:426K  onsemi
fdd86580-f085.pdf pdf_icon

FDD86569-F085

FDD86580-F085N-Channel PowerTrench MOSFET 60 V, 50 A, 10 mFeatures Typical RDS(on) = 7.8 m at VGS = 10V, ID = 50 AD Typical Qg(tot) = 20 nC at VGS = 10V, ID = 50 A UIS Capability RoHS CompliantDG Qualified to AEC Q101GApplicationsSD-PAK Automotive Engine ControlTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Electronic Steering

Otros transistores... FDD8453LZ-F085 , FDD86250_F085 , FDD86367 , FDD86367-F085 , FDD86369 , FDD86369-F085 , FDD86380-F085 , FDD86567-F085 , IRF630 , FDD86580-F085 , FDD86581-F085 , FDD8896-F085 , FDD9407-F085 , FDD9407L-F085 , FDD9409L-F085 , FDD9410-F085 , FDD9410L-F085 .

History: IRF1902PBF | SML40A26 | DMT3006LFV-7 | TK6A65D | FTU36N06N | MEE4294HT | 6HP04CH

 

 
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