FDD86569-F085 Todos los transistores

 

FDD86569-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDD86569-F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 150 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 90 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 35 nC
   Tiempo de subida (tr): 20 nS
   Conductancia de drenaje-sustrato (Cd): 690 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0057 Ohm
   Paquete / Cubierta: TO252

 Búsqueda de reemplazo de MOSFET FDD86569-F085

 

FDD86569-F085 Datasheet (PDF)

 ..1. Size:446K  onsemi
fdd86569-f085.pdf

FDD86569-F085 FDD86569-F085

FDD86569-F085N-Channel PowerTrench MOSFET 60 V, 90 A, 5.7 mDFeatures Typical RDS(on) = 4.2 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 35 nC at VGS = 10V, ID = 80 AD UIS Capability GG RoHS CompliantS Qualified to AEC Q101D-PAKTO-252Applications S(TO-252) Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starte

 7.1. Size:449K  onsemi
fdd86567-f085.pdf

FDD86569-F085 FDD86569-F085

FDD86567-F085N-Channel PowerTrench MOSFET 60 V, 100 A, 3.2 mFeatures Typical RDS(on) = 2.6 m at VGS = 10V, ID = 80 AD Typical Qg(tot) = 63 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplicationsS Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Start

 8.1. Size:241K  fairchild semi
fdd86540.pdf

FDD86569-F085 FDD86569-F085

February 2012FDD86540N-Channel PowerTrench MOSFET 60 V, 50 A, 4.1 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 4.1 m at VGS = 10 V, ID = 21.5 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 5 m at VGS = 8 V, ID = 19.5 Aringing of DC/DC converters using either synchronous or conventional

 8.2. Size:426K  onsemi
fdd86580-f085.pdf

FDD86569-F085 FDD86569-F085

FDD86580-F085N-Channel PowerTrench MOSFET 60 V, 50 A, 10 mFeatures Typical RDS(on) = 7.8 m at VGS = 10V, ID = 50 AD Typical Qg(tot) = 20 nC at VGS = 10V, ID = 50 A UIS Capability RoHS CompliantDG Qualified to AEC Q101GApplicationsSD-PAK Automotive Engine ControlTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Electronic Steering

 8.3. Size:448K  onsemi
fdd86540.pdf

FDD86569-F085 FDD86569-F085

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.4. Size:2426K  onsemi
fdd86581-f085.pdf

FDD86569-F085 FDD86569-F085

FDD86581-F085N-Channel PowerTrench MOSFET60 V, 25 A, 15 mFeatures Typical RDS(on) = 12.3 m at VGS = 10V, ID = 25 A Typical Qg(tot) = 12.6 nC at VGS = 10V, ID = 25 AD UIS Capability RoHS Compliant Qualified to AEC Q101DGApplicationsG Automotive Engine ControlSD-PAK Powertrain ManagementTO-252S(TO-252) Solenoid and Motor Drivers Electronic Steeri

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


FDD86569-F085
  FDD86569-F085
  FDD86569-F085
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: MRF5035 | MRF5015 | MRF5007R1 | MRF5007 | MRF5003 | MRF275G | MRF184S | MRF184 | MRF177M | MRF177 | MRF176GV | MRF176GU | MRF175LV | MRF175LU | MRF175GV | MRF175GU

 

 

 
Back to Top