Справочник MOSFET. FDD86569-F085

 

FDD86569-F085 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDD86569-F085
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 90 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 690 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0057 Ohm
   Тип корпуса: TO252
     - подбор MOSFET транзистора по параметрам

 

FDD86569-F085 Datasheet (PDF)

 ..1. Size:446K  onsemi
fdd86569-f085.pdfpdf_icon

FDD86569-F085

FDD86569-F085N-Channel PowerTrench MOSFET 60 V, 90 A, 5.7 mDFeatures Typical RDS(on) = 4.2 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 35 nC at VGS = 10V, ID = 80 AD UIS Capability GG RoHS CompliantS Qualified to AEC Q101D-PAKTO-252Applications S(TO-252) Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starte

 7.1. Size:449K  onsemi
fdd86567-f085.pdfpdf_icon

FDD86569-F085

FDD86567-F085N-Channel PowerTrench MOSFET 60 V, 100 A, 3.2 mFeatures Typical RDS(on) = 2.6 m at VGS = 10V, ID = 80 AD Typical Qg(tot) = 63 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplicationsS Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Start

 8.1. Size:241K  fairchild semi
fdd86540.pdfpdf_icon

FDD86569-F085

February 2012FDD86540N-Channel PowerTrench MOSFET 60 V, 50 A, 4.1 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 4.1 m at VGS = 10 V, ID = 21.5 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 5 m at VGS = 8 V, ID = 19.5 Aringing of DC/DC converters using either synchronous or conventional

 8.2. Size:426K  onsemi
fdd86580-f085.pdfpdf_icon

FDD86569-F085

FDD86580-F085N-Channel PowerTrench MOSFET 60 V, 50 A, 10 mFeatures Typical RDS(on) = 7.8 m at VGS = 10V, ID = 50 AD Typical Qg(tot) = 20 nC at VGS = 10V, ID = 50 A UIS Capability RoHS CompliantDG Qualified to AEC Q101GApplicationsSD-PAK Automotive Engine ControlTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Electronic Steering

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HAF1002 | BSS214NW | APL602J | TK3A60DA | PK5M6EA

 

 
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