FDD86580-F085 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD86580-F085

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 440 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: TO252

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FDD86580-F085 datasheet

 ..1. Size:426K  onsemi
fdd86580-f085.pdf pdf_icon

FDD86580-F085

FDD86580-F085 N-Channel PowerTrench MOSFET 60 V, 50 A, 10 m Features Typical RDS(on) = 7.8 m at VGS = 10V, ID = 50 A D Typical Qg(tot) = 20 nC at VGS = 10V, ID = 50 A UIS Capability RoHS Compliant D G Qualified to AEC Q101 G Applications S D-PAK Automotive Engine Control TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Electronic Steering

 7.1. Size:2426K  onsemi
fdd86581-f085.pdf pdf_icon

FDD86580-F085

FDD86581-F085 N-Channel PowerTrench MOSFET 60 V, 25 A, 15 m Features Typical RDS(on) = 12.3 m at VGS = 10V, ID = 25 A Typical Qg(tot) = 12.6 nC at VGS = 10V, ID = 25 A D UIS Capability RoHS Compliant Qualified to AEC Q101 D G Applications G Automotive Engine Control S D-PAK Powertrain Management TO-252 S (TO-252) Solenoid and Motor Drivers Electronic Steeri

 8.1. Size:241K  fairchild semi
fdd86540.pdf pdf_icon

FDD86580-F085

February 2012 FDD86540 N-Channel PowerTrench MOSFET 60 V, 50 A, 4.1 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 4.1 m at VGS = 10 V, ID = 21.5 A improve the overall efficiency and to minimize switch node Max rDS(on) = 5 m at VGS = 8 V, ID = 19.5 A ringing of DC/DC converters using either synchronous or conventional

 8.2. Size:449K  onsemi
fdd86567-f085.pdf pdf_icon

FDD86580-F085

FDD86567-F085 N-Channel PowerTrench MOSFET 60 V, 100 A, 3.2 m Features Typical RDS(on) = 2.6 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 63 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Start

Otros transistores... FDD86250_F085, FDD86367, FDD86367-F085, FDD86369, FDD86369-F085, FDD86380-F085, FDD86567-F085, FDD86569-F085, IRFP260N, FDD86581-F085, FDD8896-F085, FDD9407-F085, FDD9407L-F085, FDD9409L-F085, FDD9410-F085, FDD9410L-F085, FDD9411-F085