FDMC8010DC Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMC8010DC  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 157 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 1540 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00128 Ohm

Encapsulados: PQFN8-3.3X3.3

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FDMC8010DC datasheet

 ..1. Size:327K  onsemi
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FDMC8010DC

FDMC8010DC MOSFET N-Channel, DUAL COOL) 33, POWERTRENCH) 30 V, 157 A, 1.28 mW www.onsemi.com General Description This N-Channel MOSFET is produced using ON Semiconductor s DD D D advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer G S the lowest rDS(on) while maintaining excellent switching performance S

 6.1. Size:545K  fairchild semi
 fdmc8010.pdf pdf_icon

FDMC8010DC

December 2014 FDMC8010 N-Channel PowerTrench MOSFET 30 V, 75 A, 1.3 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.3 m at VGS = 10 V, ID = 30 A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.8 m at VGS = 4.5 V, ID = 25 A been especially tailored to minimize the on-state resistance. This device is

 6.2. Size:413K  fairchild semi
 fdmc8010et30.pdf pdf_icon

FDMC8010DC

January 2015 FDMC8010ET30 N-Channel PowerTrench MOSFET 30 V, 174 A, 1.3 m Features General Description This N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175 C Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.3 m at VGS = 10 V, ID = 30 A been especially tailored to minimize the on-state resistance. This device is well suited for

 6.3. Size:561K  onsemi
 fdmc8010.pdf pdf_icon

FDMC8010DC

FDMC8010 MOSFET N-Channel, POWERTRENCH) 30 V, 75 A, 1.3 mW General Description www.onsemi.com This N-Channel MOSFET is produced using ON Semiconductor s advanced POWERTRENCH process that has been especially tailored Pin 1 Pin 1 S S to minimize the on-state resistance. This device is well suited for S G applications where ultra low rDS(on) is required in small spaces such as

MOSTRAR MÁS

Otros transistores... FDD9411-F085, FDD9411L-F085, FDD9507L-F085, FDD9509L-F085, FDD9510L-F085, FDD9511L-F085, FDG6332C-F085, FDMC010N08C, AON7408, FDMD8530, FDMD8540L, FDMD8560L, 2N7002NXAK, 2N7002NXBK, BUK6D120-40E, BUK6D120-60P, BUK6D125-60E