FDMC8010DC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDMC8010DC
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 157 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 1540 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00128 Ohm
Тип корпуса: PQFN8-3.3X3.3
Аналог (замена) для FDMC8010DC
FDMC8010DC Datasheet (PDF)
fdmc8010dc.pdf
FDMC8010DCMOSFET N-Channel, DUAL COOL) 33,POWERTRENCH)30 V, 157 A, 1.28 mWwww.onsemi.comGeneral DescriptionThis N-Channel MOSFET is produced using ON Semiconductors DDDDadvanced POWERTRENCH process. Advancements in both siliconand DUAL COOL package technologies have been combined to offerGSthe lowest rDS(on) while maintaining excellent switching performanceS
fdmc8010.pdf
December 2014FDMC8010N-Channel PowerTrench MOSFET 30 V, 75 A, 1.3 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.3 m at VGS = 10 V, ID = 30 ASemiconductors advanced PowerTrench process that has Max rDS(on) = 1.8 m at VGS = 4.5 V, ID = 25 Abeen especially tailored to minimize the on-state resistance. This device is
fdmc8010et30.pdf
January 2015FDMC8010ET30N-Channel PowerTrench MOSFET30 V, 174 A, 1.3 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175CSemiconductors advanced PowerTrench process that has Max rDS(on) = 1.3 m at VGS = 10 V, ID = 30 Abeen especially tailored to minimize the on-state resistance. This device is well suited for
fdmc8010.pdf
FDMC8010MOSFET N-Channel,POWERTRENCH)30 V, 75 A, 1.3 mWGeneral Descriptionwww.onsemi.comThis N-Channel MOSFET is produced using ON Semiconductorsadvanced POWERTRENCH process that has been especially tailoredPin 1Pin 1SSto minimize the on-state resistance. This device is well suited forSGapplications where ultra low rDS(on) is required in small spaces such as
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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