BUK6D125-60E Todos los transistores

 

BUK6D125-60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK6D125-60E
   Código: 5H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.7 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.7 V
   Qgⓘ - Carga de la puerta: 4 nC
   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 24 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
   Paquete / Cubierta: SOT1220

 Búsqueda de reemplazo de MOSFET BUK6D125-60E

 

BUK6D125-60E Datasheet (PDF)

 ..1. Size:284K  nxp
buk6d125-60e.pdf

BUK6D125-60E
BUK6D125-60E

BUK6D125-60E60 V, N-channel Trench MOSFET29 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins

 7.1. Size:317K  nxp
buk6d120-60p.pdf

BUK6D125-60E
BUK6D125-60E

BUK6D120-60P60 V, P-channel Trench MOSFET3 April 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 Side wettable flanks for optical s

 7.2. Size:283K  nxp
buk6d120-40e.pdf

BUK6D125-60E
BUK6D125-60E

BUK6D120-40E40 V, N-channel Trench MOSFET29 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins

 9.1. Size:494K  nxp
buk6d210-60e.pdf

BUK6D125-60E
BUK6D125-60E

BUK6D210-60E60 V, N-channel Trench MOSFET17 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins

 9.2. Size:280K  nxp
buk6d230-80e.pdf

BUK6D125-60E
BUK6D125-60E

BUK6D230-80E80 V, N-channel Trench MOSFET29 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins

 9.3. Size:276K  nxp
buk6d43-40p.pdf

BUK6D125-60E
BUK6D125-60E

BUK6D43-40P40 V, P-channel Trench MOSFET20 December 2017 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 Side wettable flanks for optical solder i

 9.4. Size:293K  nxp
buk6d43-60e.pdf

BUK6D125-60E
BUK6D125-60E

BUK6D43-60E60 V, N-channel Trench MOSFET13 December 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder i

 9.5. Size:294K  nxp
buk6d81-80e.pdf

BUK6D125-60E
BUK6D125-60E

BUK6D81-80E80 V, N-channel Trench MOSFET4 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder inspe

 9.6. Size:284K  nxp
buk6d56-60e.pdf

BUK6D125-60E
BUK6D125-60E

BUK6D56-60E60 V, N-channel Trench MOSFET3 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder inspe

 9.7. Size:281K  nxp
buk6d72-30e.pdf

BUK6D125-60E
BUK6D125-60E

BUK6D72-30E30 V, N-channel Trench MOSFET29 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder insp

 9.8. Size:293K  nxp
buk6d77-60e.pdf

BUK6D125-60E
BUK6D125-60E

BUK6D77-60E60 V, N-channel Trench MOSFET4 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder inspe

 9.9. Size:284K  nxp
buk6d23-40e.pdf

BUK6D125-60E
BUK6D125-60E

BUK6D23-40E40 V, N-channel Trench MOSFET13 December 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder i

 9.10. Size:280K  nxp
buk6d22-30e.pdf

BUK6D125-60E
BUK6D125-60E

BUK6D22-30E30 V, N-channel Trench MOSFET10 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder insp

 9.11. Size:278K  nxp
buk6d385-100e.pdf

BUK6D125-60E
BUK6D125-60E

BUK6D385-100E100 V, N-channel Trench MOSFET29 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder i

 9.12. Size:279K  nxp
buk6d38-30e.pdf

BUK6D125-60E
BUK6D125-60E

BUK6D38-30E30 V, N-channel Trench MOSFET12 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder insp

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


BUK6D125-60E
  BUK6D125-60E
  BUK6D125-60E
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top