BUK6D22-30E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK6D22-30E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.2 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm

Encapsulados: SOT1220

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BUK6D22-30E datasheet

 ..1. Size:280K  nxp
 buk6d22-30e.pdf pdf_icon

BUK6D22-30E

BUK6D22-30E 30 V, N-channel Trench MOSFET 10 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder insp

 8.1. Size:494K  nxp
 buk6d210-60e.pdf pdf_icon

BUK6D22-30E

BUK6D210-60E 60 V, N-channel Trench MOSFET 17 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins

 8.2. Size:280K  nxp
 buk6d230-80e.pdf pdf_icon

BUK6D22-30E

BUK6D230-80E 80 V, N-channel Trench MOSFET 29 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins

 8.3. Size:284K  nxp
 buk6d23-40e.pdf pdf_icon

BUK6D22-30E

BUK6D23-40E 40 V, N-channel Trench MOSFET 13 December 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder i

MOSTRAR MÁS

Otros transistores... FDMD8540L, FDMD8560L, 2N7002NXAK, 2N7002NXBK, BUK6D120-40E, BUK6D120-60P, BUK6D125-60E, BUK6D210-60E, SKD502T, BUK6D230-80E, BUK6D23-40E, BUK6D38-30E, BUK6D385-100E, BUK6D43-40P, BUK6D43-60E, BUK6D56-60E, BUK6D72-30E