BUK6D22-30E PDF and Equivalents Search

 

BUK6D22-30E Specs and Replacement

Type Designator: BUK6D22-30E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.2 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 110 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: SOT1220

BUK6D22-30E substitution

- MOSFET ⓘ Cross-Reference Search

 

BUK6D22-30E datasheet

 ..1. Size:280K  nxp
 buk6d22-30e.pdf pdf_icon

BUK6D22-30E

BUK6D22-30E 30 V, N-channel Trench MOSFET 10 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder insp... See More ⇒

 8.1. Size:494K  nxp
 buk6d210-60e.pdf pdf_icon

BUK6D22-30E

BUK6D210-60E 60 V, N-channel Trench MOSFET 17 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins... See More ⇒

 8.2. Size:280K  nxp
 buk6d230-80e.pdf pdf_icon

BUK6D22-30E

BUK6D230-80E 80 V, N-channel Trench MOSFET 29 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins... See More ⇒

 8.3. Size:284K  nxp
 buk6d23-40e.pdf pdf_icon

BUK6D22-30E

BUK6D23-40E 40 V, N-channel Trench MOSFET 13 December 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder i... See More ⇒

SHOW MORE

Detailed specifications: FDMD8540L , FDMD8560L , 2N7002NXAK , 2N7002NXBK , BUK6D120-40E , BUK6D120-60P , BUK6D125-60E , BUK6D210-60E , SKD502T , BUK6D230-80E , BUK6D23-40E , BUK6D38-30E , BUK6D385-100E , BUK6D43-40P , BUK6D43-60E , BUK6D56-60E , BUK6D72-30E .

History: BUK6D210-60E

Keywords - BUK6D22-30E MOSFET specs

 BUK6D22-30E cross reference
 BUK6D22-30E equivalent finder
 BUK6D22-30E pdf lookup
 BUK6D22-30E substitution
 BUK6D22-30E replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 


 
↑ Back to Top
.