BUK6D22-30E
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK6D22-30E
Marking Code: 6A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 7.2
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 9.5
nC
trⓘ - Rise Time: 18
nS
Cossⓘ -
Output Capacitance: 110
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022
Ohm
Package: SOT1220
BUK6D22-30E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK6D22-30E
Datasheet (PDF)
..1. Size:280K nxp
buk6d22-30e.pdf
BUK6D22-30E30 V, N-channel Trench MOSFET10 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder insp
8.1. Size:494K nxp
buk6d210-60e.pdf
BUK6D210-60E60 V, N-channel Trench MOSFET17 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins
8.2. Size:280K nxp
buk6d230-80e.pdf
BUK6D230-80E80 V, N-channel Trench MOSFET29 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins
8.3. Size:284K nxp
buk6d23-40e.pdf
BUK6D23-40E40 V, N-channel Trench MOSFET13 December 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder i
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