BUK6D230-80E Todos los transistores

 

BUK6D230-80E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK6D230-80E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.9 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm
   Paquete / Cubierta: SOT1220
 

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BUK6D230-80E Datasheet (PDF)

 ..1. Size:280K  nxp
 buk6d230-80e.pdf pdf_icon

BUK6D230-80E

BUK6D230-80E80 V, N-channel Trench MOSFET29 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins

 7.1. Size:284K  nxp
 buk6d23-40e.pdf pdf_icon

BUK6D230-80E

BUK6D23-40E40 V, N-channel Trench MOSFET13 December 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder i

 8.1. Size:494K  nxp
 buk6d210-60e.pdf pdf_icon

BUK6D230-80E

BUK6D210-60E60 V, N-channel Trench MOSFET17 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins

 8.2. Size:280K  nxp
 buk6d22-30e.pdf pdf_icon

BUK6D230-80E

BUK6D22-30E30 V, N-channel Trench MOSFET10 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder insp

MOSTRAR MÁS

Otros transistores... FDMD8560L , 2N7002NXAK , 2N7002NXBK , BUK6D120-40E , BUK6D120-60P , BUK6D125-60E , BUK6D210-60E , BUK6D22-30E , IRFB3607 , BUK6D23-40E , BUK6D38-30E , BUK6D385-100E , BUK6D43-40P , BUK6D43-60E , BUK6D56-60E , BUK6D72-30E , BUK6D77-60E .

History: KP780V9 | SI7143DP | FQA12P20 | RSS140N03TB | VBMB165R07S | IRHN7230

 

 
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