BUK6D77-60E Todos los transistores

 

BUK6D77-60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK6D77-60E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.4 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.5 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.077 Ohm
   Paquete / Cubierta: SOT1220
 

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BUK6D77-60E Datasheet (PDF)

 ..1. Size:293K  nxp
 buk6d77-60e.pdf pdf_icon

BUK6D77-60E

BUK6D77-60E60 V, N-channel Trench MOSFET4 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder inspe

 8.1. Size:281K  nxp
 buk6d72-30e.pdf pdf_icon

BUK6D77-60E

BUK6D72-30E30 V, N-channel Trench MOSFET29 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder insp

 9.1. Size:494K  nxp
 buk6d210-60e.pdf pdf_icon

BUK6D77-60E

BUK6D210-60E60 V, N-channel Trench MOSFET17 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins

 9.2. Size:280K  nxp
 buk6d230-80e.pdf pdf_icon

BUK6D77-60E

BUK6D230-80E80 V, N-channel Trench MOSFET29 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins

MOSTRAR MÁS

Otros transistores... BUK6D230-80E , BUK6D23-40E , BUK6D38-30E , BUK6D385-100E , BUK6D43-40P , BUK6D43-60E , BUK6D56-60E , BUK6D72-30E , AO4407 , BUK6D81-80E , BUK7D25-40E , BUK7J1R0-40H , BUK7J1R4-40H , BUK7K134-100E , BUK7K15-80E , BUK7K17-80E , BUK7K23-80E .

History: 2SK3433-S | STW47NM60ND | BSP603S2L | 2SK3337W | 2SK2682LS | SDF10N90GAF | IXTN32P60P

 

 
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