All MOSFET. BUK6D77-60E Datasheet

 

BUK6D77-60E MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK6D77-60E
   Marking Code: 4Y
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
   |Id|ⓘ - Maximum Drain Current: 3.4 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 6.2 nC
   trⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.077 Ohm
   Package: SOT1220

 BUK6D77-60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK6D77-60E Datasheet (PDF)

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