BUK7K15-80E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK7K15-80E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 68 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12.6 nS

Cossⓘ - Capacitancia de salida: 194 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: SOT1205

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BUK7K15-80E datasheet

 ..1. Size:253K  nxp
 buk7k15-80e.pdf pdf_icon

BUK7K15-80E

BUK7K15-80E Dual N-channel 80 V, 15 m standard level MOSFET 11 May 2018 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET AEC

 8.1. Size:713K  nxp
 buk7k134-100e.pdf pdf_icon

BUK7K15-80E

BUK7K134-100E Dual N-channel 100 V, 121 m standard level MOSFET 2 September 2015 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET

 8.2. Size:255K  nxp
 buk7k17-80e.pdf pdf_icon

BUK7K15-80E

BUK7K17-80E Dual N-channel 80 V, 17 m standard level MOSFET 10 May 2018 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET AEC

 8.3. Size:325K  nxp
 buk7k12-60e.pdf pdf_icon

BUK7K15-80E

BUK7K12-60E Dual N-channel 60 V, 9.3 m standard level MOSFET 11 December 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET

MOSTRAR MÁS

Otros transistores... BUK6D56-60E, BUK6D72-30E, BUK6D77-60E, BUK6D81-80E, BUK7D25-40E, BUK7J1R0-40H, BUK7J1R4-40H, BUK7K134-100E, TK10A60D, BUK7K17-80E, BUK7K23-80E, BUK7K29-100E, BUK7K32-100E, BUK7K45-100E, BUK7K89-100E, BUK7M10-40E, BUK7M11-40H